开态应力下氮化镓HEMT器件的退化机理研究  

Research on the degradation mechanism of GaN HEMTs under on-state stress

作　　者：韩红波 张豪[1] 郑雪峰 马晓华[1] 于洪喜[2] 郝跃[1] HAN Hongbo;ZHANG Hao;ZHENG Xuefeng;MA Xiaohua;YU Hongxi;HAO Yue(School of Microelectronics,Xidian University,Xi’an 710071,China;China Academy of Space Technology(Xi’an),Xi’an 710000,China)

机构地区：[1]西安电子科技大学微电子学院,西安710071 [2]中国空间技术研究院西安分院,西安710000

出　　处：《空间电子技术》2024年第5期62-67,共6页Space Electronic Technology

基　　金：国家自然科学基金项目(编号:U2241220)。

摘　　要：当前,氮化镓(gallium nitride,GaN)高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件已逐渐被广泛应用。然而,退化问题仍然是困扰其高可靠应用的重要因素。特别是开态应力下,器件的退化机理值得深入研究。文章基于实验测试及仿真,重点研究了氮化镓射频HEMT器件在开态应力下的退化现象与机理。研究结果表明,单一的高漏压应力并不会对器件带来明显退化,而高漏压与大的漏极电流结合则会对器件产生明显退化,这一影响重点集中在栅极与漏极之间的有源区。需要注意的是,栅极偏置电压在沟道电子进入栅下区域的过程中也起到了重要作用。开态应力下,栅极偏压形成的垂直电场会使得器件栅下区域损伤更加严重。文章的研究成果可以为氮化镓射频器件在复杂环境下的高可靠性应用提供重要支撑。Currently,GaN HEMTs have been widely used.However,degradation issues are still the major concern for its high reliability applications.Especially,the degradation mechanism of the device under on-state stress should be studied in-depth.In this paper,the degradation phenomenon and mechanism of devices under on-state stress have been studied thoroughly based on experimental testing and simulation.The results indicate that the significant performance degradation of the device is caused by the coupling effect of high drain voltage and current,rather than the effect of a single high drain voltage.The gate-drain access region of the device is severely affected.It should be noted that the gate bias also plays an important role in channel electrons entering the region under the gate,and a vertical electric field induced by gate bias voltage under on-state stress will cause more severe damage in this region.The results of this paper can provide important support for the high-reliability application of GaN RF devices in complex environments.

关 键 词：氮化镓 开态应力 热电子效应 电子俘获 可靠性 

分 类 号：V443[航空宇航科学与技术—飞行器设计] TN385[电子电信—物理电子学]