硅氧共掺DLC薄膜的制备及阻隔性能研究  

Preparation and Barrier Properties of Silicon and Oxygen Co-doped DLC Films

作　　者：印莲华 刘忠伟[2] YIN Lianhua;LIU Zhongwei(Shanghai Publishing and Printing College,Shanghai 200093,China;Laboratory of Plasma Physics and Materials,Beijing Institute of Graphic Communication,Beijing 102600,China)

机构地区：[1]上海出版印刷高等专科学校,上海200093 [2]北京印刷学院等离子体物理与材料研究室,北京102600

出　　处：《包装工程》2024年第19期171-178,共8页Packaging Engineering

基　　金：上海市教育发展基金会和上海市教育委员会“晨光计划”项目(19CGB11)。

摘　　要：目的研究硅(Si)、氧(O)元素掺杂对类金刚石(Diamond like Carbon,DLC)薄膜沉积、结构、表面形貌以及阻隔性能的影响,为高效制备高阻隔硅氧共掺类金刚石(Si and O Incorporated DLC,Si/O-DLC)薄膜提供新的思路参考。方法利用微波等离子体化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)技术在聚对苯二甲酸乙二醇酯(Polyethylene terephthalate,PET)基底表面沉积Si/O-DLC薄膜,具体研究反应单体中六甲基二硅氧烷(Hexaethyldisiloxane,HMDSO)含量对薄膜沉积和阻隔性能的影响。通过台阶仪、傅里叶红外光谱(FTIR)、X射线光电子能谱(XPS)、原子力显微镜(AFM)表征薄膜厚度、结构和微观形貌,并通过测试氧气透过率表征复合薄膜的阻隔性能。结果随着混合气体中HMDSO含量增加,薄膜的沉积速率提高,不同高度位置上沉积速率波动变弱,平均沉积速率最高达到310 nm·min^(–1),同时,薄膜中Si、O元素含量增加,相关的键合结构含量增加,薄膜表面致密性变差,氧气阻隔性能变弱;当HMDSO流量控制在1 mL·min^(–1)时,PET薄膜的氧气透过率可从未涂覆时的132mL·m^(2)·d^(–1)降低至2mL·m^(2)·d^(-1),阻隔性能明显改善。结论在一定工艺条件下,通过微波PECVD技术在PET薄膜表面涂覆Si/O-DLC薄膜,可明显改善其阻隔性能。The work aims to investigate the effects of silicon(Si)and oxygen(O)element doping on the deposition,structure,surface morphology,and barrier properties of diamond like carbon(DLC)films,providing new ideas and references for the efficient preparation of high barrier Si and O co-doped DLC(Si/O-DLC)films.Microwave plasma enhanced chemical vapor deposition(PECVD)technology was used to deposit Si/O-DLC films on the surface of polyethylene terephthalate(PET)substrate,the effect of hexamethyldisiloxane(HMDSO)content in the reaction monomer on film deposition and properties was specifically studied.The thickness,structure,and microstructure of the composite film were characterized by profiler,Fourier transform infrared spectroscopy(FTIR),X-ray photoelectron spectroscopy(XPS),and atomic force microscopy(AFM),and the barrier properties of the composite film was characterized by testing the oxygen permeability.As the content of HMDSO in the mixed gas increased,the deposition rate of the film increased,and the fluctuations in the deposition rate at different height positions weakened,with an average deposition rate of up to 310 nm·min^(-1).At the same time,the content of Si and O elements in the film increased,the content of related bonding structures rose,the surface density of the film deteriorated,and the oxygen barrier properties weakened.When the HMDSO flow rate was controlled at 1mL·min^(–1),the oxygen permeability of PET film could be reduced from 132 mL·m^(2)·d^(-1) without coating to 2 mL·m^(2)·d^(-1),and the barrier properties were significantly improved.Under certain working conditions,coating Si/O-DLC film on the surface of PET film with microwave PECVD technology can significantly improve its barrier properties.

关 键 词：微波等离子体化学气相沉积 类金刚石 聚对苯二甲酸乙二醇酯 阻隔性能 元素掺杂 

分 类 号：TB34[一般工业技术—材料科学与工程]