离子注入诱导成核外延高质量AlN  

Ion implantation induced nucleation and epitaxial growth of high-quality AlN

作　　者：余森 许晟瑞 †陶鸿昌 王海涛 安瑕 杨赫 许钪 张进成[1,2,3] 郝跃 Yu Sen;Xu Sheng-Rui;Tao Hong-Chang;Wang Hai-Tao;An Xia;Yang He;Xu Kang;Zhang Jin-Cheng;Hao Yue(State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology,National Engineering Research Center of Wide Band-gap Semiconductor,School of Microelectronics,Xidian University,Xi’an 710071,China;Guangzhou Institute of Technology,Xidian University,Guangzhou 510555,China;Shaanxi Power Semiconductor Device Lighting Engineering Technology Research Center,Xi’an 710071,China)

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体器件与集成技术全国重点实验室,宽禁带半导体国家工程研究中心,西安710071 [2]西安电子科技大学广州研究院,广州510555 [3]陕西省大功率半导体照明工程技术中心,西安710071

出　　处：《物理学报》2024年第19期244-250,共7页Acta Physica Sinica

基　　金：国家重点研发计划(批准号:2022YFB3604400);国家自然科学基金(批准号:62074120,62134006)资助的课题。

摘　　要：超宽禁带AlN材料具有禁带宽度大、击穿电场高、热导率高、直接带隙等优势,被广泛应用于光电子器件和电力电子器件等领域.AlN材料的质量影响着AlN基器件的性能,为此研究人员提出了多种方法来提高异质外延AlN晶体的质量,但是这些方法工艺复杂且成本高昂.因此,本文提出了诱导成核的新方法来获得高质量的AlN材料.首先,对纳米图案化的蓝宝石衬底注入不同剂量的N离子进行预处理,随后基于该衬底用金属有机化学气相沉积法外延AlN基板,并在其上生长多量子阱结构,最后基于此多量子阱结构制备紫外发光二极管.研究结果表明,在注入N离子剂量为1×10^(13) cm^(-2)的衬底上外延获得的AlN基板,其表面粗糙度最小且位错密度最低.由此可见,适当剂量的N离子注入促进了AlN异质外延过程中的横向生长与合并过程;这可能是因为N离子的注入,抑制了初期成核过程中形成的扭曲的镶嵌结构,有效地降低了AlN的螺位错以及刃位错密度.此外,基于该基板制备的多量子阱结构,其残余应力最小,光致发光强度提高到无注入样品的152%.此外,紫外发光二极管的光电性能大幅提高,当注入电流为100 mA时,光输出功率和电光转换效率分别提高了63.8%和61.7%.AlN materials have a wide range of applications in the fields of optoelectronic,power electronic,and radio frequency.However,the significant lattice mismatch and thermal mismatch between heteroepitaxial AlN and its substrate lead to a high threading dislocation(TD) density,thereby degrading the performance of device.In this work,we introduce a novel,cost-effective,and stable approach to epitaxially growing AlN.We inject different doses of nitrogen ions into nano patterned sapphire substrates,and then deposit the AlN layers by using metal-organic chemical vapor deposition.Ultraviolet light-emitting diode(UV-LED) with a luminescence wavelength of 395 nm is fabricated on it,and the optoelectronic properties are evaluated.Compared with the sample prepared by the traditional method,the sample injected with N ions at a dose of 1×10^(13) cm^(-2) exhibits an82% reduction in screw TD density,the lowest surface roughness,and a 52% increase in photo luminescence intensity.It can be seen that appropriate dose of N ion implantation can promote the lateral growth and merging process in AlN heteroepitaxy.This is due to the fact that the process of implantation of N ions can suppress the tilt and twist of the nucleation islands,effectively reducing the density of TDs in AlN.Furthermore,in comparison with the controlled LED,the LED prepared on the high quality AlN template increases 63.8% and 61.7% in light output power and wall plug efficiency,respectively.The observed enhancement in device performance is attributed to the TD density of the epitaxial layer decreasing,which effectively reduces the nonradiative recombination centers.In summary,this study indicates that the ion implantation can significantly improve the quality of epitaxial AlN,thereby facilitating the development of high-performance AlN-based UV-LEDs.

关 键 词：氮化铝 离子注入 金属有机化学气相淀积 发光二极管 

分 类 号：TN304.2[电子电信—物理电子学]