磁性存储器陶瓷封装磁屏蔽设计与抗磁场干扰测试  

Magnetic Shielding Design and Anti-Magnetic Interference Test of Ceramic Package for Magnetic Random Access Memory

作　　者：赵桂林[1] 郭永强 叶海波 王超 杨霄垒 孙杰杰[1] ZHAO Guilin;GUO Yongqiang;YE Haibo;WANG Chao;YANG Xiaolei;SUN Jiejie(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China;China Electronics Technology Group Corporation No.29 Research Institute,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035 [2]中国电子科技集团公司第二十九研究所,成都610036

出　　处：《电子与封装》2024年第10期60-64,共5页Electronics & Packaging

摘　　要：磁性随机存取存储器(MRAM)以磁性隧道结(MTJ)作为存储单元来存储信息,并通过外加电流产生磁矩改写MTJ的信息,这种工作原理使得MRAM容易受到外部磁场的干扰,限制了MRAM在强磁场等恶劣环境下的应用。使用COMSOL软件进行仿真,设计并制作了磁屏蔽陶瓷外壳,搭建了基于Xilinx VIRTEX4系列FPGA的MRAM抗磁场干扰能力测试平台,进行了MRAM抗磁干扰能力实验。测试结果表明,采用带磁屏蔽结构的陶瓷外壳进行封装极大地降低了MRAM受外界磁场的干扰程度,所测试芯片的抗磁场干扰能力由35 Oe提高到420 Oe。Magnetic random access memory(MRAM)stores information through a magnetic tunnel junction(MTJ)as a storage unit,and rewrites the information in the MTJ by applying an electric current to generate a magnetic moment.Therefore,this principle of operation makes MRAM susceptible to the interference from external magnetic fields,which limits the application of MRAM in harsh environments such as strong magnetic fields.Using COMSOL software for simulation,a magnetic shielding ceramic enclosure is designed and fabricated,a MRAM anti-magnetic interference capability test platform based on Xilinx VIRTEX4 series FPGAs is constructed,and experiments on the anti-magnetic interference capability of MRAM are carried out.Test results show that the use of ceramic enclosure with magnetic shielding structure for packaging greatly reduces the degree of interference of MRAM from external magnetic fields,and the anti-magnetic interference capability of the tested chip is improved from 35 Oe to 420 Oe.

关 键 词：磁性随机存取存储器 抗磁场干扰 磁屏蔽 磁性隧道结 陶瓷封装 

分 类 号：TN406[电子电信—微电子学与固体电子学]