基于DRIE的太赫兹行波管硅基低损耗慢波结构工艺技术研究  

Research on Si-based Low-loss Slow-wave Structures for THz TWT Fabricated by DRIE Technology

作　　者：吴杰 杨扬 刘欣 严可[1,2] 郑源 冯堃[1] 王政焱 姜理利 黄旼[1] 李忠辉[1,2] 朱健[1] 陈堂胜 WU Jie;YANG Yang;LIU Xin;YAN Ke;ZHENG Yuan;FENG Kun;WANG Zhengyan;JIANG Lili;HUANG Min;LI Zhonghui;ZHU Jian;CHEN Tangsheng(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;CETC Key Laboratory of Carbon-based Electronics,Nanjing,210016,CHN;School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu,611731)

机构地区：[1]南京电子器件研究所,南京210016 [2]中国电科碳基电子重点实验室,南京210016 [3]电子科技大学电子科学与工程学院,成都611731

出　　处：《固体电子学研究与进展》2024年第5期369-373,共5页Research & Progress of SSE

摘　　要：行波管慢波结构的制造通常采用计算机数字化控制精密机械加工技术。随着工作频率的提升,对慢波结构特征尺寸精度的要求达到微纳米级,导致加工难度大、周期长,成本高昂,一定程度上限制了技术的快速发展。硅基MEMS加工工艺具备优秀的三维形貌可控性,尺寸控制精度高,批次一致性较好。本文针对太赫兹行波管功率源对双槽深折叠波导慢波结构的设计要求,开发了基于硅基底材料的三维集成工艺制造技术。采用光刻胶掩蔽结合介质掩蔽工艺方法,聚焦优化深反应离子刻蚀(Deep reactive ion etching,DRIE)中刻蚀钝化平衡参数,完成了电镀金和金金键合的完整工艺流程开发,实现了工作频率达0.65 THz、单位长度插入损耗低至1.6 dB/mm的高性能硅基太赫兹慢波结构150 mm晶圆级工艺制备,为太赫兹行波管的技术突破和应用发展建立了技术基础。The fabrication of traveling wave tube(TWT)slow-wave structures typically em-ploys computer-numerically-controlled precision machinery.As the operating frequency increases,the requirement for the precision of the characteristic dimensions of the slow-wave structure reaches the micron to nanometer scale,which presents significant challenges in machining and involves long cycles and high costs,and thus limiting the rapid development of the technology.Silicon-based MEMS processing technology offers excellent three-dimensional morphological molding,high precision control and good batch-to-batch consistency.This paper addresses the design requirements for a dual-slot deep-folded waveguide slow-wave structure for THz TWT power source,and developed a three-dimensional integrated process manufacturing technology based on silicon substrate.A method combining photoresist masking with dielectric masking is employed,and the balance between the etching and passivation processes during deep reactive ion etching(DRIE)is carefully optimized.The process is then completed with electroplating gold and gold-gold bonding.Therefore,high-performance siliconbased terahertz slow-wave structures have been successfully manufactured at 150-mm wafer level with a working frequency of 0.65 THz and the insertion loss as low as 1.6 dB/mm,which helps establish technical foundations for technological breakthrough and application development of terahertz TWTs.

关 键 词：太赫兹 慢波结构 低损耗 硅基 MEMS 深反应离子刻蚀(DRIE) 

分 类 号：TN816[电子电信—信息与通信工程] TN124