截止频率1.2 THz的GaN肖特基二极管及其三倍频单片集成电路  

GaN Schottky Barrier Diode with 1.2 THz Cut⁃off Frequency and Its Frequency Tripler Monolithic Integrated Circuit

作　　者：代鲲鹏 纪东峰 李俊锋 李传皓[1] 张凯[1] 吴少兵[1] 章军云[1] DAI Kunpeng;JI Dongfeng;LI Junfeng;LI Chuanhao;ZHANG Ka;WU Saobing;ZHANG Junyun(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2024年第5期384-389,F0002,共7页Research & Progress of SSE

基　　金：国家重点研发计划资助项目(2023YFB3609600)。

摘　　要：通过设计不同掺杂浓度和厚度的GaN低掺杂外延层,制造了两款SiC基GaN肖特基势垒二极管(Schott⁃ky barrier diode,SBD)。结果显示在低掺杂层厚度为80 nm,掺杂浓度为8×10^(17)cm^(−3)条件下制备的GaN SBD截止频率高达1.2 THz。基于该SBD管芯制备了平衡式三倍频单片集成电路,室温下三倍频电路在305~330 GHz频段内连续波饱和输出功率大于10 mW,带内最大输出功率达25 mW,最高倍频效率达到3.3%。Two GaN Schottky barrier diodes(SBDs)on SiC were fabricated with different dop⁃ing concentration and thickness of low doped GaN epitaxial layer.The results show that the SBD pre⁃pared with epitaxial layer thickness of 80 nm and doping concentration of 8×10^(17)cm^(−3),which has a cut-off frequency up to 1.2 THz.Based on this SBD,a balanced frequency tripler terahertz monolithic integrated circuit(TMIC)was fabricated.At room temperature,the output power of this frequency tripler reaches 10 mW to 25 mW in the range of 305 GHz to 330 GHz with max efficiency of 3.3%in continuous wave mode.

关 键 词：GaN肖特基势垒二极管 三倍频 单片集成电路 太赫兹 梁式引线 

分 类 号：TN312[电子电信—物理电子学]