基于GaAs肖特基二极管单片集成技术的330~400 GHz三倍频器  

A 330-400 GHz Tripler Using GaAs Schottky Diode Monolithic Integrated Technology

作　　者：纪东峰 代鲲鹏 王维波[1] 余旭明[1] JI Dongfeng;DAI Kunpeng;WANG Weibo;YU Xuming(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2024年第5期396-400,共5页Research & Progress of SSE

基　　金：国家重点研发计划“智能传感器”重点专项项目(2023YFB3207801)。

摘　　要：基于砷化镓肖特基二极管研制了工作频率为330~400 GHz的三倍频器。在三倍频电路中,通过将二极管管芯排布方向与信号传输方向垂直,形成了无偏置反向并联型结构,实现对偶次谐波的抑制和对奇次谐波的增强,提高了三倍频器倍频效率。为减小电路封装误差,采用单片集成技术将二极管和外围电路集成在25μm厚的砷化镓衬底上实现三倍频芯片。并将芯片封装入一体设计的屏蔽腔中构成了波导-悬置微带线结构来减小电路损耗。实测结果显示,在330~400 GHz范围内,当输入功率为22 dBm时,三倍频器输出功率大于5.5 dBm,并有优于7 dBm的峰值输出功率。In this paper,a tripler working at 330-400 GHz was developed using the GaAs Schott⁃ky diode technology.In the triple frequency circuit,a passive reverse parallel balanced structure was achieved by setting the arrangement direction of diode cores perpendicular to the signal transmission di⁃rection.This structure can suppress even harmonics,enhance odd harmonics and improve the frequen⁃cy doubling efficiency.To reduce packaging errors,the monolithic integration technology was used to integrate the Schottky diode and peripheral circuits on a 25μm thick GaAs substrate,creating a chip.The chip was then packaged into the shielding cavity to form a waveguide-suspended microstrip line structure for a small circuit loss.The test results show that within the 330-400 GHz range,the output power of the tripler is greater than 5.5 dBm at the input power of 22 dBm,and the peak output power is better than 7 dBm.

关 键 词：三倍频器 太赫兹 砷化镓肖特基二极管 单片集成技术 

分 类 号：TN7715[电子电信—电路与系统] TN312