一款基于非线性模型设计的高性能GaN功率放大载片  

A High Performance GaN Power Amplifier Designed Based on Nonlinear Model

作　　者：景少红 徐祖银 李飞 成爱强 梁宸玮 JING Shaohong;XU Zuyin;LI Fei;CHENG Aiqiang;LIANG Chenwei(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2024年第4期277-283,共7页Research & Progress of SSE

基　　金：国家重点研发计划项目(2022YFF0707800,2022YFF0707801);江苏省重点研发计划产业前瞻与关键核心技术项目(BE2022070,BE2022070-2)。

摘　　要：采用南京电子器件研究所研制的0.35μm栅长、60 V高压AlGaN/GaN HEMT工艺,利用可缩放大信号模型仿真设计了一款工作在S波段的高性能功率放大载片。该功率放大载片由单个总栅宽为36.4 mm的GaN管芯采用混合集成内匹配方案设计而成,漏极工作电压为60 V,工作频带为2.7~3.5 GHz。测试结果表明,在环境温度300 K,脉宽250μs、占空比15%的脉冲测试条件下,功率放大载片在工作频带内最大饱和输出功率为354.8 W,最大功率附加效率为61%,功率增益大于14.7 dB,显示了GaN器件的高工作电压、高功率密度、宽工作频带等特性。In this paper,a high-performance power amplifier operating in S-band was designed by the 0.35μm gate length and 60 V high voltage GaN HEMT process developed by Nanjing Electronic Devices Institute and the AlGaN/GaN scalable large signal model simulation guidance.The power amplifier was designed by a single GaN die with a total gate width of 36.4 mm using a hybrid integrat-ed internal matching scheme.The drain voltage was 60 V and the frequency band was 2.7-3.5 GHz.The test results show that the saturated output power of the power amplifier can reach up to 350 W,the power additional efficiency can reach up to 61%and the power gain is greater than 14.5 dB in the operating frequency band under the condition of pulse test with ambient temperature of 300 K,pulse width of 250μs and duty cycle of 15%,which fully demonstrates the characteristics of GaN devices such as high working voltage,high power density and wide operating bandwidth.

关 键 词：ALGAN/GAN 高电子迁移率晶体管 非线性模型 功率放大载片 

分 类 号：TN722[电子电信—电路与系统]