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作 者:陈黎萍 CHEN Liping(Shanghai Inmat Material Technology Co.,Ltd.,Shanghai,201899,CHN)
机构地区:[1]上海英迈特材料科技有限公司,上海201899
出 处:《固体电子学研究与进展》2024年第4期343-350,共8页Research & Progress of SSE
摘 要:随着集成电路关键尺寸的逐步减小,图形形貌分辨率要求提高。本文系统性地探讨了集成电路互连金属的发展路线,归纳了相应的湿电子化学品在清洗和电镀方面的工作原理,并阐述了光刻胶的发展路程以及抗反射涂层的基本原理。最后对互连材料以及湿电子化学品的未来要求进行了总结和展望。With the gradual small of the critical dimension of integrated circuits,the better resolu-tion is being required.The development route of interconnect metals was systematically discussed in this paper.The principle of the corresponding wet electronic chemicals in cleaning and electroplating were discussed simply.The development path of photoresist and the principle of anti-reflection coating were described.Finally,the development direction of interconnect materials and the future require-ments of wet electronic chemicals were summarized and prospected.
分 类 号:TN405.97[电子电信—微电子学与固体电子学]
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