氮化镓电致发光谱及原位温度近场同测研究  

Near⁃Field Simultaneous Measurement of Gallium Nitride Electroluminescence Spectrum and In⁃Situ Temperature

作　　者：康晓雪 陈娜[1,2] 李韶颖 刘真民 刘书朋[1,2] 商娅娜[1,2] 黄伟 卢红亮 王廷云[1,2] Kang Xiaoxue;Chen Na;Li Shaoying;Liu Zhenmin;Liu Shupeng;Shang Yana;Huang Wei;Lu Hongliang;Wang Tingyun(Key Laboratory of Specialty Fiber Optics and Optical Access Networks,Shanghai University,Shanghai 200444,China;Joint International Research Laboratory of Specialty Fiber Optics and Advanced Communication,ShanghaiUniversity,Shanghai 200444,China;State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China)

机构地区：[1]上海大学特种光纤与光接入网重点实验室,上海200444 [2]上海大学特种光纤与先进通信国际合作联合实验室,上海200444 [3]复旦大学微电子学院专用集成电路和系统国家重点实验室,上海200433

出　　处：《中国激光》2024年第17期213-219,共7页Chinese Journal of Lasers

基　　金：国家自然科学基金(62027818);高等学校学科创新引智计划(D20031)。

摘　　要：温度及电致发光谱检测对于氮化镓(GaN)器件的可靠性表征至关重要。利用音叉原子力反馈和量子点修饰的光纤探针,对GaN材料微纳米区域的电致发光谱和原位温度进行近场同测研究。在音叉原子力反馈控制下,量子点光纤探针趋近GaN样品表面。近场收集电致发光谱和探针针尖处量子点的荧光谱,依据量子点荧光谱峰位偏移与温度的线性关系,解调出样品表面微纳米区的原位温度。不同电压激励下GaN电致发光谱及温度同测结果表明:在0~12 V的激励电压范围内,当激励电压达到9 V时,GaN开始出现电致发光现象,电致发光谱峰强随着激励电压的升高而逐渐升高,中心峰位保持不变,且电致发光导致其自身阻抗特性发生变化,从而导致9~12 V激励电压范围内的GaN表面温度梯度明显高于0~9 V激励电压范围内的温度梯度。该方法实现了近场电致发光谱和温度的原位同测,为器件可靠性研究提供了新的测量手段。Objective Temperature and electroluminescence spectra are critical for the reliability characterization of gallium nitride(GaN)devices.The traditional method of reliability characterization combines the existing temperature measurement and electroluminescence detection.The temperature measurement method is mainly used to measure the lattice temperature and Joule heating.Electroluminescence is primarily used to measure gate current leakage,thermal electrons,and electric fields,which complement each other.Because the electroluminescence spectrum is correlated with temperature,it is necessary to characterize the temperature simultaneously with the measurement of the electroluminescence spectrum to avoid the influence of lattice temperature on the electroluminescence spectrum.Therefore,the simultaneous characterization of the electroluminescence spectrum and in situ temperature is important for the reliability evaluation of GaN devices.Currently,the measurement of the electroluminescence spectrum mainly uses an electroluminescence spectrometer,and temperature characterization method includes micro-Raman spectroscope,thermoreflectance,and scanning thermal field microscope.However,these methods cannot achieve simultaneous in-situ measurement of the electroluminescence spectrum and temperature in micro-nano regions.The core component of scanning probe microscopy(SPM)technology is the fiber probe,which has the ability to transmit optical signals and collect near-field optical signals.However,the conventional fiber probe cannot be used for temperature measurement,whereas the cadmium selenide quantum dot(QD)-modified fiber probe is verified to be suitable for the nondestructive detection of the temperature of living cells.In this study,we propose a new near-field simultaneous measurement method for the electroluminescence spectrum and in-situ temperature using a cadmium selenide QD-modified fiber probe,which is used to characterize the electroluminescence spectra and near-field temperatures of GaN samples under different v

关 键 词：量子点光纤探针 氮化镓 近场测温 电致发光谱 原位检测 

分 类 号：TN256[电子电信—物理电子学]