激光能量分布对GaN基光导开关导通特性的影响  

Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches

作　　者：杨彪 孙逊[1,2] 李阳凡 沙慧茹 焦健 李德强[1,2] 张雷 栾崇彪[3] 肖龙飞 陈秀芳[1,2] 徐现刚[1,2] Yang Biao;Sun Xun;Li Yangfan;Sha Huiru;Jiao Jian;Li Deqiang;Zhang Lei;Luan Chongbiao;Xiao Longfei;Chen Xiufang;Xu Xiangang(Institute of Novel Semiconductors,Shandong University,Jinan 250100,China;State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China;Institute of Fluid Physics,CAEP,Mianyang 621900,China)

机构地区：[1]山东大学新一代半导体材料研究院,济南250100 [2]山东大学晶体材料国家重点实验室,济南250100 [3]中国工程物理研究院流体物理研究所,四川绵阳621900

出　　处：《强激光与粒子束》2024年第11期32-36,共5页High Power Laser and Particle Beams

基　　金：山东省自然科学基金项目(ZR2022QF059);山东省高等学校青创科技支持计划项目(2022KJ032)。

摘　　要：光斑是影响光导开关导通特性的重要因素之一。探索了激光能量分布对光导开关输出特性的影响,分别采用高斯光和平顶光对同一GaN光导开关导通特性进行了对比测试。结果表明,由于平顶光具有更均匀的能量分布,相比于高斯光触发,在相同外加偏置电压(800 V)下,电压转换效率提升了6.8%。在激光能量为500μJ时的平顶光触发下进行了加压测试,最大峰值输出电压为4550 V,此时输出功率达到414 kW,上升时间为420 ps,下降时间为5 ns,导通电阻为13.7Ω。The beam spot is one of the important factors affecting the on-state performance of photoconductive switches.The on-state performance of the GaN photoconductive switch has been tested under the triggering of Gaussian beam and flat-top beam.As the energy uniformity of flat-top beam is better than that of Gaussian beam,the results show that the voltage conversion efficiency is increased by 6.8%under the same applied bias voltage(800 V),Triggered by flat-top beam at a laser energy of 500μJ,GaN PCSS shows a maximum peak output voltage of 4550 V,at the same time the output power reaches 414 kW and the conduction is 13.7Ω.The output waveform has a rise time of 420 ps and a fall time of 5 ns.

关 键 词：光导开关 GAN 平顶光 高斯光 导通特性 

分 类 号：TN36[电子电信—物理电子学]