星用半导体器件单粒子效应脉冲激光试验技术进展  

Progress in Single Event Effects by Pulsed Laser Testing Technology for Satellite Semiconductor Devices

作　　者：上官士鹏 韩建伟 马英起 陈睿 朱翔 王英豪 梁亚楠 SHANGGUAN Shipeng;HAN Jianwei;MA Yingqi;CHEN Rui;ZHU Xiang;WANG Yinghao;LIANG Yanan(National Space Science Centre,Chinese Academy of Sciences,Beijing 100190,China;Beijing zhongke SEEIC space technology CO.LTD.,Beijing 101499,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院国家空间科学中心,北京100190 [2]北京中科芯试验空间科技有限公司,101499 [3]中国科学院大学,北京100049

出　　处：《现代应用物理》2024年第4期103-109,共7页Modern Applied Physics

基　　金：国家重点研发计划资助项目(2022YFF0503603)。

摘　　要：解决星用半导体器件抗单粒子效应能力的评估、筛选及加固验证是其航天应用的核心关键技术问题。利用脉冲激光模拟试验单粒子效应已经有接近40年的历史,脉冲激光模拟试验技术可微米量级精准定位器件的单粒子效应敏感位置及皮秒量级测试电路动态响应,可满足卫星用载荷的研制及芯片研制部门的不同测试需求。通过多年的试验及理论研究,利用皮秒脉冲激光测试硅基芯片的单粒子效应试验技术已经成熟,相关的国标、国军标已经发布;同时随着半导体技术的进步,宽禁带半导体器件单粒子效应的测试也逐渐成为研究热点。利用脉冲激光双光子吸收(two photon absorption,TPA)机制试验SiC,GaN器件单粒子效应,建立了激光有效能量等效LET值与重离子LET值的对应关系。Evaluation,screening,and hardness assurance of the satellite semiconductor devices to single event effects resilience are the key technical issues for their aerospace applications.The use of pulsed laser simulation testing for single event effects has a history of nearly 40 years.Pulsed laser simulation testing technology,with its ability to accurately locate the sensitive position of single event effects in devices at the micrometer level and the dynamic response of picosecond testing circuits,can satisfy different testing needs of satellite payload development and chip development departments.Through years of experimental and theoretical research,the technology for testing single event effect on silicon-based chips using picosecond pulsed lasers has become mature,and relevant national and military standards are released.With the advancement of semiconductor technology,the testing of single event effect in wide bandgap semiconductor devices has gradually become a research hotspot.The single particle effect of SiC and GaN devices is tested using the pulsed laser two-photon absorption(TPA)mechanism,and the corresponding relationship between the effective energy equivalent LET of the laser and the heavy ion LET is established.

关 键 词：星用半导体器件 脉冲激光 单粒子效应 双光子吸收(TPA) 宽禁带 

分 类 号：TL56[核科学技术—核技术及应用] O571[理学—粒子物理与原子核物理]