基于X射线晶圆在线辐照实验的16 nm n-FinFETs总剂量效应模型研究  

Total Ionizing Dose Effect of 16 nm n-FinFETs Models Based on X-ray Wafer Online Irradiation Facility

作　　者：魏雪雯 郑齐文 崔江维[2,3,4] 李豫东 郭旗[2,3,4] WEI Xuewen;ZHENG Qiwen;CUI Jiangwei;LI Yudong;GUO Qi(School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions,Urumqi 830011,China;Xinjiang Key Laboratory of Extreme Environment Electronics,Urumqi 830011,China;Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China)

机构地区：[1]中国科学院大学电子电气与通信工程学院,北京100049 [2]特殊环境条件功能材料与器件全国重点实验室,乌鲁木齐830011 [3]新疆极端环境电子学重点实验室,乌鲁木齐830011 [4]中国科学院新疆理化技术研究所,乌鲁木齐830011

出　　处：《现代应用物理》2024年第4期116-123,共8页Modern Applied Physics

基　　金：新疆维吾尔自治区重点研发计划资助项目(2023B01008)。

摘　　要：建立了基于X射线晶圆在线辐照实验的16 nm FinFET总剂量效应模型,并对模型的有效性进行了验证。将辐照后器件等效为一个主晶体管与辐射导致的若干寄生晶体管并联,通过改变寄生晶体管的参数对辐照中的物理机制进行了模拟。对不同鳍片数量的内核(core)和输入输出(input output,IO)n-FinFET建立了能够描述器件在不同漏源电压下工作性能的模型,仿真结果与实验数据对比表明,所建立的模型的相对均方根偏差小于15%。In this paper,a model of total ionizing dose on 16 nm fin field-effect transistor(FinFET)based on X-ray wafer online irradiation experiment is established and the effectiveness of model is verified.The irradiated device is equivalent to a main transistor and several parasitic transistors caused by radiation connected in parallel.By changing the parameters of the parasitic transistors,the physical mechanisms during irradiation are simulated.Models describing the device's performance under different gate voltages for different number of fins in the core and input-output(IO)n-FinFETs are established.The comparison between simulation results and experimental data showed that the established models have a relative root mean square deviation percentage of less than 15%.

关 键 词：FINFET 总剂量效应 SPICE模型 辐射损伤 器件可靠性 

分 类 号：TL99[核科学技术—核技术及应用] O571[理学—粒子物理与原子核物理]