300 MeV质子重离子加速器及电子器件单粒子效应试验研究  

300 MeV Proton and Heavy Ion Accelerator and Single Event Effects of Electronic Devices

作　　者：沈志强[1] 刘剑利[1] 陈启明[1] 肖一平 刘超铭[2] 王天琦[1] SHEN Zhiqiang;LIU Jianli;CHEN Qiming;XIAO Yiping;LIU Chaoming;WANG Tianqi(School of Space Environment and Material Science,Harbin Institute of Technology,Harbin 150001,China;School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]哈尔滨工业大学空间环境与物质科学研究院,哈尔滨150001 [2]哈尔滨工业大学材料科学与工程学院,哈尔滨150001

出　　处：《现代应用物理》2024年第4期130-136,共7页Modern Applied Physics

基　　金：国家自然科学基金资助项目(12075069,12275061,62304102,62234007,62293522,U21A20503,U21A2071)。

摘　　要：300 MeV质子重离子加速器主要用于模拟空间环境中高能粒子辐照,探索高能粒子与材料、器件以及生命体的相互作用机理。该加速器主要由离子源、直线加速器、注入线、同步加速器、引出线和3个实验终端组成。自2022年11月验收以来,该加速器已完成质子束、氦束、碳束、氪束、钽束、铋束、铀束等离子束的调试,相继开展了材料、电子器件、农作物种子、微生物、小鼠等样品的辐照试验,成为基础研究的实验平台。在基于该加速器的辐照试验平台中,开展了国产SiC功率MOSFET器件单粒子效应研究。300 MeV质子重离子加速器产生能量为1864.3 MeV的^(181)Ta^(31+)离子束,在经过钛窗和空气中传输后,达到SiC表面时LET值为80.7 MeV·cm^(2)·mg^(-1)。通过在SiC功率MOSFET器件漏极上施加不同偏置电压,对栅极和漏极泄漏电流检测分析,获取了在不同偏置条件下SiC MOSFET器件的漏电退化行为。300 MeV Proton and Heavy Ion Accelerator is used to simulate high-energy particle irradiation in space environment,and explore the interaction mechanisms between high-energy particles and materials,devices or organism.This accelerator mainly consists of an ion source,a linear accelerator,an injection line,a synchrotron,an extraction line,and three experimental terminals.Since its inspection in November 2022,this accelerator has achieved various beams,including proton beam,helium beam,carbon beam,krypton beam,tantalum beam,bismuth beam,uranium beam,etc.In this fundamental research test platform,irradiation experiments on samples,such as aerospace materials,electronic devices,crop seeds,microorganisms,and experimental mice,has been successively conducted.In this irradiation test platform based on this accelerator,single event effect researches are conducted on domestically produced SiC MOSFET devices.181 Ta 31+ion beam is accelerated to the energy of 1864.3 MeV in 300 MeV proton and heavy ion accelerator.After passing through a titanium window and air,the LET value of^(181)Ta^(31+)ion beam is 80.7 MeV·cm^(2)·mg^(-1).By applying different bias voltages to the drain of SiC MOSFET devices,the leakage currents of the gate and drain are detected and analyzed,and the leakage degradation behavior of SiC MOSFET devices under different drain bias voltages is obtained.

关 键 词：质子重离子加速器 高能粒子辐照 SiC功率MOSFET器件 栅极潜损伤 泄漏电流永久退化 单粒子烧毁 

分 类 号：TL53[核科学技术—核技术及应用] O571[理学—粒子物理与原子核物理]