高性能锑化物中红外半导体激光器的研究进展  

Research progress on high preformance mid-infrared antimonide semiconductor lasers

作　　者：曹钧天 杨成奥 陈益航 余红光 石建美 王天放 闻皓冉 王致远 耿峥琦 张宇[1,2] 赵有文 吴东海[1,2] 徐应强 倪海桥[1,2] 牛智川 CAO Juntian;YANG Cheng’ao;CHEN Yihang;YU Hongguang;SHI Jianmei;WANG Tianfang;WEN Haoran;WANG Zhiyuan;GENG Zhengqi;ZHANG Yu;ZHAO Youwen;WU Donghai;XU Yingqiang;NI Haiqiao;NIU Zhichuan(State Key Laboratory for Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所光电子材料与器件重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《激光技术》2024年第6期790-798,共9页Laser Technology

基　　金：国家自然科学基金资助项目(62204238);山西省科技重大专项基金资助项目(202201030201009)。

摘　　要：半导体材料体系经历了3次重要迭代,在微电子、通信、人工智能、碳中和等重要领域得到了广泛应用。随着高新技术的快速发展,锑化物半导体作为最具发展前景的第4代半导体材料之一,在开发下一代高性能、小体积、低功耗、低成本的红外光电器件领域具有独特的优势和广阔的应用前景。综述了锑化物半导体激光器的发展过程和国内外的研究现状,分析了器件结构设计、材料外延、模式选择、波长扩展等关键问题,阐述了采用分子束外延技术生长高性能锑化物量子阱激光器,实现大功率、单模、高光束质量的锑化物激光器的设计方案和关键工艺技术,并对兼具低成本、高成品率、大功率等优异特性的单模锑化物激光器的研究前景进行了展望。Going through three important iterations,semiconductor material systems have been widely used in important fields such as microelectronics,communications,artificial intelligence,and carbon neutrality.With the rapid development of technologies,the research ona new generation of high-performance semiconductor materials and devices has become the focus of international anvanced technology.As one of the most promising fourth-generation semiconductor material,antimonide semiconductor materials have unique advantages andbroad application prospects in developingnext-generation high-performance,small-volume,low-power,and low-cost infrared optoelectronic devices.In this paper,the development process and research status of antimonide semiconductor lasers at home and abroad were reviewed,the key issues such as design of device structure,material epitaxial growth,mode selection and wavelength expansion were analyzed,high-performance antimonide quantum well lasers have been grown by molecular beam epitaxy technology.The design scheme and key technology for realizing high-power,single-mode and high-beam quality antimonide lasers were emphasized,and the research prospect of single-mode antimonide lasers with excellent characteristics such as low cost,high yield and high power was predicted.

关 键 词：激光器 锑化物 中红外 量子阱激光器 

分 类 号：TN248.4[电子电信—物理电子学] TN214