电子束设备蒸镀铝膜工艺的研究  

Study on Aluminum Film Evaporation Using Electron Beam Equipment

作　　者：付学成[1] 瞿敏妮 权雪玲 乌李瑛 王英[1] 程秀兰[1] FU Xue-cheng;QU Min-ni;QUAN Xue-ling;WU Li-ying;WANG Ying;CHENG Xiu-lan(Advanced Electronics Materials and Devices,Shanghai Jiao Tong University,Shanghai 200240,China)

机构地区：[1]上海交通大学先进电子材料与器件平台,上海200240

出　　处：《真空》2024年第6期1-6,共6页Vacuum

基　　金：上海市2022年度“科技创新行动计划”集成电路领域项目(22501100800)。

摘　　要：利用电子束蒸镀设备沉积高质量铝膜是薄膜工艺的一个难题。为此,提出一种采用改造的三氧化二铝坩埚作为蒸镀铝膜的衬锅,通过三次添加物料预熔再蒸镀来沉积铝膜的方法,研究了不同蒸镀速度对铝膜电阻率、晶粒形貌和成分组成的影响。结果表明:凸起状的熔融铝液面能有效增大其与坩埚壁的接触角,基本消除铝膜中的三氧化二铝杂质;随着蒸镀速度的增加,铝膜晶粒尺寸逐渐增大,而平均电阻率呈下降趋势;采用本方法能够制备出纯度99.9%,电阻率最低为3.4×10^(-6)Ω·cm的铝膜。Using electron beam evaporation equipment to deposit high-quality aluminum film is a big challenge in the film process.Therefore,a method was proposed to deposit aluminum film by using a modified Al2O3 crucible as the lining pot,and adding materials and pre-melting them three times.The effects of different evaporation rates on the electrical resistivity,grain morphology and composition of aluminum films were studied.The results show that the convex molten aluminum liquid surface can increase the contact angle with the crucible wall,basically eliminate the aluminum oxide impurities in the aluminum film.With the increase of evaporation rate,the grain size of aluminum film increases and the average resistivity decreases.The aluminum film with purity of 99.9%and the lowest resistivity of 3.4×10^(-6)Ω·cm can be prepared by adding materials for pre-melting three times.

关 键 词：电子束蒸发 铝膜 水冷坩埚 三氧化二铝坩埚 

分 类 号：TB43[一般工业技术]