GaN P沟道功率器件及集成电路研究进展  

Research Progress in GaN P-Channel Power Devices and Integrated Circuits

作　　者：朱霞 王霄 王文倩 李杨 李秋璇 闫大为 刘璋成 陈治伟 敖金平 ZHU Xia;WANG Xiao;WANG Wenqian;LI Yang;LI Qiuxuan;YAN Dawei;LIU Zhangcheng;CHEN Zhiwei;AO Jinping(School of Integrated Circuits,Jiangnan University,Wuxi 214122,China;Engineering Research Center of IoT Technology Applications(Ministry of Education),School of Integrated Circuits,Jiangnan University,Wuxi 214122,China;Engineering Research Center for Intelligent Sensors and Application-Specific Integrated Circuits(Jiangsu Province),School of Integrated Circuits,Jiangnan University,Wuxi 214122,China)

机构地区：[1]江南大学集成电路学院,江苏无锡214122 [2]江南大学集成电路学院物联网技术应用教育部工程研究中心,江苏无锡214122 [3]江南大学集成电路学院江苏省智能传感器与专用集成电路工程研究中心,江苏无锡214122

出　　处：《电子与封装》2024年第11期64-72,共9页Electronics & Packaging

基　　金：国家自然科学基金(62104183,61991442);江苏省重点研发计划产业前瞻与关键核心技术(BE2023007-1);中央高校基本科研业务费(JUSRP123057,JUSRP123058,JUSRP123059)。

摘　　要：GaN功率器件具有导通电阻小、开关速度快、击穿电压高等特点,已广泛应用于高频、高功率的电力电子转换器中。为充分发挥GaN器件的性能优势,将功率电子器件和控制器、驱动等外围电路进行全GaN单片集成是最小化寄生参数的有效手段,也是GaN功率集成电路的重要发展方向。着眼于利用二维空穴气(2DHG)的GaN基P型器件的发展进程,论述了P型器件面临的技术难题,进一步分析了其对于GaN互补逻辑电路集成发展的重要性,讨论了相关的GaN集成工艺平台,对器件结构及制备工艺的创新、GaN集成技术面临的相关挑战进行了分析与展望。GaN power devices have been widely used in high-frequency,high-power power electronic converters due to their characteristics of low on-resistance,fast switching speed and high break-down voltage.In order to give full play to the performance advantages of GaN devices,the all-GaN monolithic integration of power electronic devices and peripheral circuits such as controllers and drivers is an effective way to minimize parasitic parameters,which is an important development direction of GaN power integrated circuits.Focusing on the development process of GaN-based P-type devices utilizing two-dimensional hole gas(2DHG),the technical difficulties faced by P-type devices are discussed.Furthermore,their importance for the development of GaN complementary logic circuit integration is demonstrated.The related GaN integration process platforms are discussed,and the innovation of device structure and fabrication processes,as well as the related challenges faced by GaN integration technology are analyzed and prospected.

关 键 词：GAN 二维空穴气 P型器件 互补逻辑集成 

分 类 号：TN432[电子电信—微电子学与固体电子学]