超表面硅光偏振分束器制备及测试  

Fabrication and Test of Metasurface Silicon Polarization Beam Splitters

作　　者：朱仕杰 王路 石昊 赵俊 吴衍青 张磊 李镇江 龙家丽 杨树敏 邰仁忠 Zhu Shijie;Wang Lu;Shi Hao;Zhao Jun;Wu Yanqing;Zhang Lei;Li Zhenjiang;Long Jiali;Yang Shumin;Tai Renzhong(College of Microelectronics,Shanghai University,Shanghai 200444,China;Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201800,China;University of Chinese Academy of Sciences,Beijing 100049,China;Shanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201204,China;Zhejiang Lab,Hangzhou 311100,Zhejiang,China)

机构地区：[1]上海大学微电子学院,上海200444 [2]中国科学院上海应用物理研究所,上海201800 [3]中国科学院大学,北京100049 [4]中国科学院上海高等研究院上海同步辐射光源,上海201204 [5]之江实验室,浙江杭州311100

出　　处：《光学学报》2024年第19期289-295,共7页Acta Optica Sinica

基　　金：国家重点研发计划(2017YFA0206002,2017YFA0403400)。

摘　　要：根据梯度指数物理模型设计的超表面硅光偏振分束器方案,在绝缘体上硅(SOI)平台上利用电子束光刻(EBL)和电感耦合等离子体刻蚀(ICP)等微纳加工手段完成了器件的制备。该方案针对该超表面器件的制造要求优化了制备工艺,所制备的器件超表面结构特征尺寸误差小于5 nm,刻蚀深度误差小于10 nm;最后利用搭建的硅光探针台进行实际测试,结果表明在覆盖C波段的1510~1590 nm波段范围内,TE模式的插入损耗小于3.9 dB,TM模式的插入损耗小于3.8 dB,消光比大于20 dB。Objective Compared to traditional electronic devices,silicon-based optoelectronic devices have larger information capacities,lower exchange latencies,and larger transmission bandwidths.Thus,they are expected to solve the problems caused by the rapid growth in global network capacity caused by the emergence of new generation information technologies such as the Internet of Things,cloud computing,and big data since the beginning of the 21st century.Polarization beam splitters are important devices for implementing polarization insensitive photonic integrated circuits,while traditional silicon-based polarization beam splitters typically have larger dimensions but cannot be integrated compactly on a chip.The introduction of subwavelength structures makes it possible to miniaturize silicon optoelectronic devices.The design of subwavelength devices is usually based on physical intuition in forward design and computer optimization in reverse design.The reverse design of subwavelength devices allows for the free optimization of the shape of metasurfaces,with greater degrees of freedom and the ability to obtain very fine structures.However,most existing research on designing subwavelength structures using inverse design methods requires high computational power and low diversity.Our previous proposal of using a two-dimensional code metasurface silicon polarization beam splitter based on a gradient index to theoretically analyze the gradient refractive index physical model effectively prevents the solutions from being trapped in local optimums and eliminates the uncertainty resulting from the sensitivity to the stochastic initial values.This design method has the characteristics of low dependence on the computational power,high design freedom,and great optimization potential.Although the error tolerance is considered in the design process,there are various forms of errors in actual processing.Thus,there are high requirements for fabricating.It is necessary to optimize processing methods such as electron beam lithography(EB

关 键 词：硅基光电子 超表面 偏振分束器 电子束光刻 电感耦合等离子体刻蚀 在片测试 

分 类 号：O436[机械工程—光学工程]