β-Al_(2)O_(3)与金属铝的阳极键合及性能分析  

Anode Bonding and Properties Analysis ofβ-Al_(2)O_(3)and Aluminum

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作  者:王强[1] 阴旭[1] 刘翠荣[1] 许兆麒 于秀秀 张蕾 刘淑文 Wang Qiang;Yin Xu;Liu Cuirong;Xu Zhaoqi;Yu Xiuxiu;Zhang Lei;Liu Shuwen(School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China)

机构地区:[1]太原科技大学材料科学与工程学院,太原030024

出  处:《微纳电子技术》2024年第12期157-162,共6页Micronanoelectronic Technology

基  金:国家自然科学基金(52375365)。

摘  要:采用高纯铝片与β-Al_(2)O_(3)陶瓷片进行阳极键合实验,通过控制键合温度和电压,研究了键合界面的微观结构和元素分布。实验结果表明,在适当的温度和电压下,铝与β-Al_(2)O_(3)界面形成了致密且无裂纹的过渡层,过渡层厚度约为5μm。扫描电子显微镜(SEM)和能谱(EDS)分析结果显示,界面处O、Na、Mg元素在铝中的扩散程度较小,主要是由于这些元素的低扩散系数和界面化学反应的阻碍作用。此外,力学性能测试结果表明,键合强度随着键合温度和电压的增加而显著提高,其中键合电压对剪切强度的影响更为显著。在900 V和500℃条件下,接头剪切强度达到3.6 MPa,断口主要发生在β-Al_(2)O_(3)基体中,表明键合界面强度高于基体强度。该研究为优化阳极键合工艺参数提供了理论依据和实验支持,对新材料在阳极键合中的应用起到了一定的推动作用。Anode bonding experiments were carried out between high purity aluminum sheet andβ-Al_(2)O_(3)ceramic sheet.The microstructure and element distribution at bonding interface were studied by controlling bonding temperature and voltage.The experimental results show that at the appropriate temperature and voltage,a dense and crack-free transition layer at the aluminum andβ-Al_(2)O_(3)interface is formed,the thickness of the transition layer is about 5μm.Scanning electron microscopy(SEM)and energy dispersive spectrum(EDS)analysis results show that the diffusion degree of O,Na,Mg elements at the interface is smaller in aluminum,mainly due to the low diffusion coefficients of these elements and the hindrance of interfacial chemical reaction.In addition,the mechanical property test results show that the bonding strength increases significantly with the increase of the bonding temperature and voltage,and the effect of the bonding voltage on the shear strength is more significant.At 900 V and 500℃,the shear strength of the joint reaches 3.6 MPa,and the fracture mainly occurs in theβ-Al_(2)O_(3)matrix,indicating that the bonding interface strength is higher than the matrix strength.This study provides theoretical basis and experimental support for optimizing the process parameters of anode bonding,and promotes the application of new materials in anode bonding.

关 键 词:阳极键合 β-Al_(2)O_(3)  键合界面 过渡层 

分 类 号:TG4[金属学及工艺—焊接]

 

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