2 nm GaAs插入层对905 nm波段InGaAs多量子阱发光的影响  

Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence

作　　者：甘露露 王海珠 张崇 赵书存 王祯胜 王登魁 马晓辉 GAN Lulu;WANG Haizhu;ZHANG Chong;ZHAO Shucun;WANG Zhensheng;WANG Dengkui;MA Xiaohui(State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China;Research Institute of Chongqing,Changchun University of Science and Technology,Chongqing 401135,China;The First Military Representative Office of the Army Equipment Department Stationed in Changchun Area,Changchun 130000,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022 [2]长春理工大学重庆研究院,重庆401135 [3]陆军装备部驻长春地区第一军事代表室,吉林长春130000

出　　处：《发光学报》2024年第12期2011-2020,共10页Chinese Journal of Luminescence

基　　金：重庆自然科学基金(cstc2021jcyjmsxmX1060,CSTB2022NSCQ-MSX0401);吉林省科技发展计划(20210101473JC)。

摘　　要：为探明GaAs插入层对905 nm波段InGaAs多量子阱材料发光性能的影响问题,基于InGaAs/InAlGaAs和InGaAs/AlGaAs两种量子阱材料,利用金属有机化合物化学气相沉积(MOCVD)技术,制备了905 nm波段的InGaAs多量子阱材料。通过AFM和XRD测试发现,GaAs插入层可以优化两种材料的表面粗糙度和结晶质量。室温PL测试进一步说明,GaAs插入层可以改善两种材料的能带结构,增强发光效果。变温和变功率PL测试表明,引入GaAs插入层后InGaAs/InAlGaAs发光波长随温度升高呈现“S”型变化,特征值α<1,低温下的辐射复合机制从自由激子复合发光变成了“局域态”发光。而对于InGaAs/AlGaAs材料,GaAs插入层并没有改变其辐射复合机制。本文在深入研究GaAs插入层对InGaAs/InAlGaAs和InGaAs/AlGaAs多量子阱材料光学性能和载流子复合机制的影响方面具有一定意义。To investigate the effect of GaAs insertion layer on the luminescence performance of 905 nm wavelength InGaAs multi quantum well materials,based on InGaAs/InAlGaAs and InGaAs/AlGaAs quantum well materials,four period 905 nm wavelength InGaAs multi quantum wells were grown using metal organic compound chemical vapor de-position(MOCVD)technology.Atomic force microscopy(AFM)and X-ray diffraction(XRD)analyses revealed that the GaAs insertion layer optimizes the surface roughness and crystal quality of both materials.Room temperature photoluminescence(PL)testing further demonstrated that the GaAs insertion layer improves the energy band struc-ture of the materials,thereby improving luminescence efficiency.Variable temperature and variable power PL tests show that for InGaAs/InAlGaAs materials,after the GaAs insertion layer is introduced,the wavelength changes in an“S”shape with increasing temperature,and the characteristic valueαis less than 1.The radiation recombination mechanism at low temperature changes from free exciton recombination to“localized states”luminescence.In contrast,for InGaAs/AlGaAs materials,the GaAs insertion layer does not alter the radiation recombination mechanism.This article is significant for advancing the understanding of the effects of the GaAs insertion layer on the optical properties and carrier recombination mechanisms of InGaAs/InAlGaAs and InGaAs/AlGaAs multiple quantum well materials.

关 键 词：多量子阱 GaAs插入层 局域态 金属有机化合物化学气相沉积(MOCVD) 

分 类 号：O482.31[理学—固体物理]