HEMT器件结构和工作原理研究  

HEMT Device Structure and Working Principle

作　　者：雷霖 Lei Lin(College of Big Data and Information Engineering,Guizhou University,Guiyang Guizhou 550025,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵州贵阳550025

出　　处：《山西电子技术》2024年第6期94-97,共4页Shanxi Electronic Technology

摘　　要：高电子迁移率晶体管(HEMT,High Electron Mobility Transistor)以其优良的低噪声特性、高速电子迁移率、高增益和大功率等特性成为竞争力最强和发展潜力最大的半导体器件之一,它广泛应用于通讯芯片、航天探测、国防航空、遥感卫星等民用和军事领域。而现在HEMT大致经历了三代,因此在面临越来越多的选择,挑选合适的器件,应用合适的特性使其满足具体的功能以及系统就显得格外重要。基于此,在HEMT器件的历史背景及发展现状的基础上对HEMT器件的工作原理进行了概述。HEMT(High Electron Mobility Transistor)has become one of the most competitive and promising semiconductor devices with its excellent characteristics of low noise,high electron mobility,high gain and high power.It is widely used in communication chip,space exploration,defense aviation,remote sensing satellites and other civil and military fields.HEMT have been around for three generations now,so with more and more choices,it is important to select the right device and apply the right characteristics to meet the specific function and system.Based on the historical background and development status of HEMT devices,the working principle of HEMT devices is summarized in this paper.

关 键 词：HEMT器件 GaAs基 INP基 GaN基 

分 类 号：TN32[电子电信—物理电子学]