0.18μm PDSOI MOSFET高温模型研究  

Investigation on High-temperature Model of 0.18μm PDSOI MOSFET

作　　者：王成成[1,2] 洪敏 蒲凯文 王芳 李博 朱慧平[1,2] 刘凡宇[1,2] 卜建辉[1,2] WANG Chengcheng;HONG Min;PU Kaiwen;WANG Fang;LI Bo;ZHU Huiping;LIU Fanyu;BU Jianhui(Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,P.R.China;Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,Beijing 100029,P.R.China;National Key Laboratory of Integrated Circuits and Microsystems,Chongqing 401332,P.R.China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院抗辐照器件技术重点实验室,北京100029 [3]集成电路与微系统全国重点实验室,重庆401332

出　　处：《微电子学》2024年第4期542-546,共5页Microelectronics

基　　金：集成电路与微系统全国重点实验室基金项目(2022-JCJQ-LB-049-3)。

摘　　要：针对目前业界主流伯克利短沟道绝缘栅场效应晶体管模型绝缘体上硅(Berkeley Short-Channel Insulated Gate Field Effect Transistor Model Silicon-On-Insulator,BSIMSOI)模型无法满足高温集成电路仿真需求的问题,开展了绝缘体上硅(Silicon-On-Insulator,SOI)金属氧化物半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)器件高温模型研究。提出了一种应用于部分耗尽型绝缘体上硅(Partially Depleted Silicon-On-Insulator,PDSOI)器件高温漏电的建模方法,通过引入亚阈值漏电参数的温度关系模型,对现有BSIMSOI模型进行优化,获得了适用于250℃的PDSOI MOSFET高温模型。然后利用0.18μm PDSOI MOSFET进行高温模型的参数提取与验证,模型仿真数据与测试数据拟合良好,尤其是漏电流误差减小到5%以内,大大提高了器件模型高温下的仿真精度。In response to the problem that the current mainstream BSIMSOI model cannot meet the simulation requirements of high-temperature integrated circuits,research is conducted on the high-temperature model of SOI MOSFET devices.In this study,a modeling method for the high-temperature leakage of PDSOI devices is proposed.By introducing the temperature relationship model of the sub-threshold leakage parameter,the existing BSIMSOI model was optimized,and finally,a high-temperature model of PDSOI MOSFET applied to 250℃was obtained.Then,the parameters of the high-temperature model were extracted and verified using the data of 0.18μm PDSOI MOSFET.The simulation data of the model could be fitted well with the test data,especially the leakage error was reduced to less than 5%,significantly improving the simulation accuracy of the device model at high temperatures.

关 键 词：BSIMSOI PDSOI 亚阈值漏电 高温模型 

分 类 号：TN386[电子电信—物理电子学]