沉积温度对MOCVD法制备固体氧化物燃料电池GDC阻挡层性质的影响  

Effect of Deposition Temperature on the Property of Solid Oxide Fuel Cell GDC Barrier Layer Prepared by Metal-Organic Chemical Vapor Deposition

作　　者：马超 熊春艳 徐源来 赵培 MA Chao;XIONG Chunyan;XU Yuanlai;ZHAO Pei(Key Laboratory of Green Chemical Process of Ministry of Education,School of Chemical Engineering&Pharmacy,Wuhan Institute of Technology,Wuhan 430205,China)

机构地区：[1]武汉工程大学化工与制药学院,绿色化工过程教育部重点实验室,武汉430205

出　　处：《人工晶体学报》2024年第12期2197-2204,共8页Journal of Synthetic Crystals

摘　　要：致密的氧化钆掺杂的氧化铈(GDC)薄膜可以被应用于固体氧化物燃料电池(SOFC)的阴极LSCF与电解质YSZ的阻挡层,防止绝缘相SrZrO3的生成,从而提高电池的耐久性。本文以四(2,2,6,6-四甲基-3,5-庚二酮)铈(Ce(DPM)_(4))和三(2,2,6,6-四甲基-3,5-庚二酮)钆(Gd(DPM)_(3))为前驱体,采用智能化学气相沉积设备在723~923 K在YSZ陶瓷基板表面制备GDC薄膜,并研究了不同沉积温度对GDC薄膜的相组成、择优取向、宏观表面、微观结构和电化学性能的影响。在748~923 K时制备了具有(200)择优取向的淡黄色GDC薄膜,且GDC晶粒呈岛状生长模式。在873 K时得到了阻挡效果良好的(200)择优取向的淡黄色GDC薄膜。组装LSCF/GDC/YSZ/GDC/LSCF对称电池,在1073 K下测得电池阻抗为0.08Ω·cm^(2),活化能为1.52 eV,表明873 K为化学气相沉积法制备GDC薄膜的最佳沉积温度。The compact Gd-doped ceria(GDC)film can be applied to the barrier layer between the cathode LSCF and the electrolyte YSZ of solid oxide fuel cell(SOFC)to prevent the formation of the insulating phase SrZrO_(3),thereby improving the fuel cell durability.In this paper,four(2,2,6,6-tetramethyl-3,5-heptadione)cerium(Ce(DPM)_(4))and three(2,2,6,6-tetramethyl-3,5-heptadione)gadolinium(Gd(DPM)_(3))were used as precursor,GDC barrier films were prepared on YSZ ceramic substrates using intelligent chemical vapor deposition equipment at 723~923 K.Effects of deposition temperatures on the phase composition,preferred orientation,macroscopic surface,microstructure and electrochemical properties of GDC barrier films were investigated,respectively.Light yellow GDC films with(200)preferred orientation are obtained at 748~923 K,and the GDC grains show an island growth pattern.A(200)preferred orientation light yellow GDC film with the best blocking ability is prepared at 873 K.The measured impedance of the LSCF/GDC/YSZ/GDC/LSCF fuel cell at 1073 K is 0.08Ω·cm^(2),and the activation energy is 1.52 eV,indicating that 873 K is the best deposition temperature for GDC barrier film preparation using chemical vapor deposition.

关 键 词：氧化钆掺杂氧化铈 金属有机物化学气相沉积 沉积温度 固体氧化物燃料电池 

分 类 号：O484[理学—固体物理] TM911.4[理学—物理]