组合工艺提高ZrO_(2)薄膜阻变的稳定性研究  

Improving Theresistive-Switching Stability of ZrO_(2)Thin Films by Combined Process

作　　者：徐文彬[1] 任高潮[2] XU Wenbin;REN Gaochao(College of Ocean Information Engineering,Jimei University,Xiamen 361021,China;Dept of Information Science&Electronics Engineering,Zhejiang University,Hangzhou 310027,China)

机构地区：[1]集美大学海洋信息工程学院,福建厦门361021 [2]浙江大学信电系,浙江杭州310027

出　　处：《集美大学学报（自然科学版）》2024年第6期556-561,共6页Journal of Jimei University：Natural Science

基　　金：福建省自然科学基金项目“基于组合工艺调控氧空位分布的氧化钛阻变存储器研究”(2019J01717)。

摘　　要：提出纳米屏蔽阵和氧气等离子处理相结合的组合工艺,用于提高ZrO 2薄膜阻变稳定性。纳米屏蔽阵通过气相沉积法制备,再利用屏蔽阵的间隙约束作用对阻变层进行选择性氧气等离子处理,使阻变薄膜中出现高/低结晶区交替分布的特征,导电细丝受此约束将集中分布于低结晶区。扫描电子显微镜和X射线衍射观察结果显示,1500℃气相沉积后产生的屏蔽阵有最佳的导电细丝约束作用,相应电学测试中阻变开关比达到10^(4)量级,且千次阻变循环后存储窗口的变化范围在10%以内。This paper discusses the effect of the combination of nano shielding array(SA)and oxygen plasma treatment on improving theresistive-switching(RS)stability of ZrO_(2)thin films.The nanocrystalline SA was prepared by vapor deposition,and then selective oxygen plasma treatment was carried out on the RS layer by using the gap constraint of the SA,the conductive filaments will be concentrated in the low crystalline region.The results of SEM(scaning electron microscope)and XRD(X-ray diffraction)show that the SA produced by 1500℃vapor deposition has the best restraint action of conducting filaments,and the resistance switching ratio reaches 10^(4)orders of magnitude in the corresponding electrical test,the change of storage window is less than 10%after thousand RS cycles.

关 键 词：纳米屏蔽阵 等离子处理 阻变 ZrO_(2) 稳定性 

分 类 号：TN604[电子电信—电路与系统]