4通道X波段50 W功放模块设计  

Design of 4-Channel X-Band 50 W Power Amplifier Module

作　　者：王洪刚 丛龙兴 WANG Honggang;CONG Longxing(China Electronics Technology Group Corporation No.51 Research Institute,Shanghai 200000,China)

机构地区：[1]中国电子科技集团公司第五十一研究所,上海200000

出　　处：《电子与封装》2024年第12期38-42,共5页Electronics & Packaging

摘　　要：基于GaN功放模块的阵列化应用,采用GaN功率单片和栅极调制设计了一款4通道X波段50 W功放模块,该模块在频段为8~12 GHz、工作电压为+28 V、脉宽为200 ns~700μs、周期为1μs~2.8 ms的工作条件下,功率增益大于42 dB,功率附加效率超过28.7%,饱和输出功率大于47 dBm。Based on array application of GaN power amplifier module,a 4-channel X-band 50 W power amplifier module is designed using GaN power monoliths and gate modulation.In the frequency band of 8-12 GHz,with the operating voltage of+28 V,a pulse width of 200 ns-700μs and a pulse period of 1μs-2.8 ms,the power gain is more than 42 dB,the power additive efficiency exceeds 28.7%,and the saturated output power is more than 47 dBm。

关 键 词：功放模块 GAN 栅极 X波段 50 W 

分 类 号：TN722[电子电信—电路与系统]