增强型GaNHEMT器件5MeV质子辐照试验研究  

Experimental study on 5 MeV proton irradiation of enhancement-mode GaN HEMT devices

作　　者：邱一武 董磊 殷亚楠 周昕杰[1] QIU Yiwu;DONG Lei;YIN Yanan;ZHOU Xinjie(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,无锡214035

出　　处：《核技术》2024年第12期95-102,共8页Nuclear Techniques

基　　金：抗辐照应用技术创新中心创新基金(No.KFZC2021010202)资助。

摘　　要：氮化镓器件凭借优异的性能在抗辐照应用领域备受关注,为探究不同结构的氮化镓器件抗质子辐照能力,开展了对增强型Cascode级联结构和P-GaN栅结构GaN高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)器件的5MeV质子辐照试验,分析器件电学特性退化规律,并明确其质子辐照效应损伤机制。试验发现,质子辐照注量越大,Cascode结构器件阈值电压负漂越严重,同时饱和漏极电流增加越显著,当质子注量大于1×10^(13) p∙cm^(-2)时,器件电学特性退化程度开始降低。对于P-GaN栅结构GaN HEMT而言,辐照后电学特性退化规律与Cascode结构器件截然相反,且退化程度明显小于Cascode结构器件,表明增强型Cascode结构器件对质子辐照更加敏感。结合低频噪声测试,发现随辐照注量的增加,Cascode结构器件噪声功率谱密度先增加后保持稳定,其变化规律与电学特性退化情况相吻合。分析认为,5 MeV质子辐照诱导发生电离损伤使Cascode结构器件内部级联的Si基金属-氧化物-半导体场效应晶体管(Metal-Oxide-Semiconductor Field Effect Transistor,MOSFET)栅氧化层产生了更多的氧化物陷阱电荷与界面态陷阱电荷,是Cascode结构器件对质子辐照敏感的主要原因。研究结果对GaN功率器件加固设计和航天应用器件选型具有一定的参考价值。[Background]GaN-based high electron mobility transistor(HEMT)has been widely used in satellite communication,space station and other fields due to its high thermal conductance,high breakdown voltage and radiation resistance.However,the existence of a large number of high-energy particles in space will induce defects in the device,resulting in the performance degradation or even failure of the device,which seriously threatens the reliability of the device.[Purpose]This study aims to investigate the anti-proton irradiation damage ability of enhancement mode gallium nitride devices with different structures,analyze the degradation rule of the devices'electrical characteristics after proton irradiation,and clarify the damage mechanism of proton irradiation.[Methods]First of all,the enhancement mode Cascode structure devices manufactured by Transphorm corporation and P-GaN gate structure GaN HEMTs manufactured by Innoscience corporation were taken as irradiation samples.Then,a 5 MeV proton irradiation experiment with irradiation dose of 2×1012 p∙cm^(-2),1×10^(13) p∙cm^(-2),1×1014 p∙cm^(-2) was carried out using the EN-18 serial electrostatic accelerator at Peking university for Cascode structure samples whilst only 1×10^(13) p∙cm^(-2) for P-GaN gate structure samples.The irradiation was carried out at room temperature,and the devices were not biased during the experiment.After each irradiation dose,drain current(Ids),threshold voltage(Vth),and gate leakage current(Igs)were electrically characterized in all the samples.Finally,Kesight B1500A semiconductor parameter tester and LFN-1000 low-frequency noise testing system were employed to test the electrical characteristics and low-frequency noise of these samples before and after irradiation.[Results]The experimental results show that the threshold voltage negative drift of the Cascode device becomes more serious with the increase of proton irradiation dose,and the saturation drain current increases significantly.When the irradiation dose reaches 1×10^(13) p

关 键 词：增强型GaNHEMT器件 质子辐照 电学特性 低频噪声 损伤机制 

分 类 号：TN386[电子电信—物理电子学]