功率器件芯片自发热对水汽入侵的抑制作用  

Suppression Effect of Self-Heating of Power Device Chips on Moisture Invasion

作　　者：吴天华 王延浩 邓二平 王作艺 周国华 黄永章 Wu Tianhua;Wang Yanhao;Deng Erping;Wang Zuoyi;Zhou Guohua;Huang Yongzhang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Beijing 102206,China;State Key Laboratory of High-Efficiency and High-Quality Conversion for Electric Power(Hefei University of Technology),Hefei 230009,China;Hangzhou Xiaoshan District Power Supply Company,State Grid Zhejiang Electric Power Co.,Ltd.,Hangzhou 310000,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京102206 [2]电能高效高质转化全国重点实验室(合肥工业大学),合肥230009 [3]国网浙江省电力有限公司杭州市萧山区供电公司,杭州310000

出　　处：《半导体技术》2025年第1期77-85,共9页Semiconductor Technology

基　　金：国家自然科学基金(52007061);国家电网公司科学技术项目(5108-202218280A-2-110-XG)。

摘　　要：为探究高温高湿环境中功率器件芯片自发热现象对水汽入侵的抑制作用机理及其对功率器件静态参数和封装可靠性的影响,将器件分成三组进行功率循环测试对比实验。第一组器件直接进行功率循环测试;第二组器件在60℃/85%RH环境储存1000 h再进行功率循环测试;第三组器件在60℃/85%RH环境储存1000 h期间导通电流,令芯片自发热模拟实际工况(芯片结温为120℃),然后进行功率循环测试。实验结果显示,水汽入侵会使功率器件的静态参数发生漂移,缩短器件功率循环寿命。器件功率循环寿命缩短的原因是水汽入侵腐蚀了器件键合线,影响了键合线可靠性。功率器件芯片自发热可以抑制水汽入侵,减小由水汽入侵导致的静态参数漂移及其对器件键合线的腐蚀作用。To investigate the suppression effect mechanism of self-heating phenomenon of power device chips on moisture invasion in high-temperature and high-humidity environments,as well as the effect on the static parameters and packaging reliability of power devices,the power devices were divided into three groups for a power cycling comparison test.The first group of devices were tested for power cycling directly.The second group of devices were stored in 60℃/85%RH environment for 1000 h before power cycling test.The third group of devices were stored in 60℃/85%RH environment for 1000 h with the chip being self-heated by conduction current to simulate actual working conditions(the chip junction temperature was 120℃),and then the power cycling test was carried out.The experimental results show that moisture invasion can cause the static parameters drift of power devices and shorten the power cycling life of devices.The shortening in power cycling life of the device is due to the bonding wires corrosion of devices caused by moisture invasion,affecting the reliability of the bonding wires.The self-heating of power device chips can suppress moisture invasion,and reduce the static parameter drift and the corrosive effects on the bonding wires of devices caused by moisture invasion.

关 键 词：高温高湿 功率器件 静态参数 功率循环 封装可靠性 键合线 

分 类 号：TN386.1[电子电信—物理电子学] TN306