纳米金属氧簇EUV光刻胶及其性能影响因素  

Nano metal-oxygen cluster EUV photoresists and their performance influencing factors

作　　者：邢攸美 胡涛 方伟华 尹云舰 高立江 刘伟鑫 徐钉 金海安 王国杰[3] Youmei Xing;Tao Hu;Weihua Fang;Yunjian Yin;Lijiang Gao;Weixin Liu;Ding Xu;Haian Jin;Guojie Wang(Hangzhou Greenda Electronic Materials Co.,Ltd.,Hangzhou 311228,China;China Electronics Materials Industry Association,Beijing 100029,China;School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China)

机构地区：[1]杭州格林达电子材料股份有限公司,杭州311228 [2]中国电子材料行业协会,北京100029 [3]北京科技大学材料科学与工程学院,北京100083

出　　处：《中国科学：化学》2024年第12期2452-2462,共11页SCIENTIA SINICA Chimica

摘　　要：随着半导体行业的发展,先进电子技术亟需更高电子元件密度的集成电路(integrated circuit,亦称积体电路).在集成电路光刻技术(photolithography,亦称微影技术)中,图案化特征结构的尺寸主要取决于曝光光源的波长.为将图形化尺寸推到更小的极限,曝光光源的波长从紫外发展到极紫外.近年来,波长为13.5 nm的极紫外光(extreme ultraviolet,EUV)成为新一代光刻技术的光源,是实现10 nm及以下制程的关键因素.除光源和光刻机外,光刻胶(photoresist,亦称光阻)也是决定图案化特征尺寸的重要因素,其关键性能指标包括分辨率、灵敏度、线边缘粗糙度和线宽粗糙度等.目前适配于EUV光源的光刻胶主要有聚合物、分子玻璃和金属基材料等几类,其中,纳米金属氧簇EUV光刻胶具备高灵敏度、高分辨率和低粗糙度等性能,成为半导体集成电路行业的研究热点.本文主要介绍近年来纳米金属氧簇EUV光刻胶体系的组成、结构特征及其性能影响因素,采用多种表征手段,从分辨率、灵敏度和粗糙度等角度阐述光刻胶成分结构及环境因素对光刻过程及图案形成的影响,多层次了解其光刻机理及性能平衡策略.With the development of the semiconductor industry,fabricating integrated circuits with higher density of electrical components is required to realize more advanced electronics technologies.In lithography technology,the size limitation of patterned feature structures is mainly determined by the wavelength of light radiation used to pattern a photoresist.In order to push the size of patterned feature structures to a smaller limit,the wavelength of light decreases more and more from ultraviolet to extreme ultraviolet.In recent years,extreme ultraviolet light(EUV)with a wavelength of 13.5 nm has become the light source for the new generation lithography technology.EUV lithography technology is a key technology for achieving sub-10 nm half-pitch node.Apart from the equipment such as light sources and lithography machines,the size of patterned structures is also constrained by photoresists.The critical properties of photoresist include resolution,sensitivity,line edge roughness(LER),and line width roughness(LWR).Up to now,many photoresists for EUV lithography have been developed,mainly including three categories such as polymer photoresists,molecular glass photoresists,and metal-based photoresists.Among them,the nano metal-oxygen cluster EUV photolithography colloid system with high sensitivity,high resolution,and low roughness due to its precise structure,small and uniform particle size,leads to its enormous application potential in EUV-based nanolithography.Overall,this review mainly introduces the composition and structural characteristics of nano metal-oxygen cluster EUV photoresists in recent years,as well as the factors affecting their performance.Multiple characterization methods are used to elucidate influence of photoresist composition,structure,and environmental factors on the photolithography process and pattern formation from the perspectives of resolution,sensitivity,and roughness.The photolithography mechanism and performance balance strategy are understood at multiple levels.

关 键 词：纳米结构 金属氧簇 极紫外 光刻胶 半导体集成电路 

分 类 号：TN305.7[电子电信—物理电子学] TB383.1[一般工业技术—材料科学与工程]