硼膜多步骤注N的镀层结构研究  

Study on Microstructureof Polyenergetic Nitrogen Ion Implanted Boron Film

作　　者：唐云[1] 张平[1] 谭俊[1] 蔡志海[1] 

机构地区：[1]装甲兵工程学院材料科学与工程系,北京100072

出　　处：《中国表面工程》2002年第4期25-27,共3页China Surface Engineering

基　　金：国家自然科学基金资助项目(59971065)

摘　　要：用离子束溅射硼靶,在W6Mo5Cr4V2钢上沉积一层硼膜,再用反冲注入法注氮以形成氮化硼(BN),注入时采用逐次递减能量(即50 keV,30 keV,10 keV)的多步骤注入。用XPS分析膜的成分深度分布及元素的化学价态;用傅立叶红外(FTIR)反射谱分析膜的结构,结果表明:膜基界面产生混合,与用单一能量注入相比,多步骤注入时,膜层的N/B分布比较均匀;硼在膜中以BN形式存在,膜深度较大处为a-BN或h-BN,并且随着深度的降低,膜有向c-BN转化的趋势。Boron films were deposited on W6Mo5Cr4V2 high speed steel using ion beam sputtering from boron target and implanted with polyenergetic(50 keV, 30 keV, 10 keV) nitrogen ions. The implanted films were characterized by X-ray Photoelectron Spectroscopy (XPS) and Fourier Infrared (FTIR) spectroscopy. The concentration profiles of XPS analysis showed an interfacial mixing between film and substrate. Compared with monoenergetic ion implantation, polyenergetic ion implanted films displayed an even N/B distribution. Boron existed in the form of boron nitride as a-BN or h-BN, with the depth decreasing, it showed a tendency to transform to c-BN.

关 键 词：硼膜 镀层 离子注入 氮化硼 结构 

分 类 号：TG174.444[金属学及工艺—金属表面处理]