碳纳米管单片三维集成电路  

Monolithic Three-dimensional Integrated circuits of Carbon Nanotube Transistors

作　　者：谢雨农 张志勇[2] XIE Yunong;ZHAGNG Zhiyong(College of Metrology Measurement and Instrument,China Jiliang University,Hangzhou,310018,CHN;Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon‑based Electronics,School of Electronics,Peking University,Beijing,100871,CHN)

机构地区：[1]中国计量大学计量测试与仪器学院,杭州310018 [2]北京大学电子学院纳米器件物理与化学教育部重点实验室碳基电子学研究中心,北京100871

出　　处：《固体电子学研究与进展》2024年第6期487-502,共16页Research & Progress of SSE

基　　金：国家自然科学青年基金资助项目(62401531)。

摘　　要：随着人工智能、大数据等领域的发展,对芯片算力和能效的要求越来越高。传统的硅基芯片技术面临功耗墙、存储墙和尺寸缩减等限制,亟须新的沟道材料和芯片架构来推动信息电子产业的继续向前。碳纳米管(Carbon nanotube,CNT)因其优异的电学、力学和热学性能,成为构建下一代集成电路的理想材料。本文综述了碳纳米管单片三维集成电路(Molithic three-dimmensional integrated circuit,M3D IC)的最新研究进展,包括其制备工艺、性能优势、应用场景以及面临的挑战,最后讨论了未来可能发展的几个方向。With the development of fields such as artificial intelligence and big data,the demands for chip computing power and energy efficiency are increasing.Traditional silicon-based chip technology faces limitations such as power consumption walls,memory walls,and scaling challenges,necessitating new channel materials and chip architectures to propel the continued advancement of the information electronics industry.Carbon nanotubes(CNTs),due to their excellent electrical,mechanical,and thermal properties,have emerged as ideal materials for constructing the next generation of integrated circuits.This article reviews the latest research progress in monolithic three-dimensional integrated circuits(M3D ICs)based on carbon nanotubes,including their fabrication processes,performance advantages,application scenarios,and challenges faced.Finally,several potential directions for future development are discussed.

关 键 词：碳纳米管 单片三维集成电路 场效应晶体管 低维半导体材料电子学 

分 类 号：TQ127.11[化学工程—无机化工]