钆掺杂的高非线性和低漏流SnO_(2)基压敏电阻材料  

Gadolinium-doped SnO_(2)-based Varistor Materials with High Nonlinear Coefficient and Low Leakage Current

作　　者：孙斐 赵洪峰[1] 缪奎 SUN Fei;ZHAO Hongfeng;MIAO Kui(The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment,School of Electrical Enginee-ring,Xinjiang University,Urumqi 830046,China;Xidian Surge Arrester Co.,Ltd.,Xi’an 710200,China)

机构地区：[1]新疆大学电气工程学院,电力系统及大型发电设备安全控制和仿真国家重点实验室风光储分室,乌鲁木齐830046 [2]西安西电避雷器有限公司,西安710200

出　　处：《材料导报》2025年第2期31-34,共4页Materials Reports

基　　金：新疆维吾尔自治区自然科学基金(2022D01C21)。

摘　　要：本工作通过在SnO_(2)-Co_(3)O_(4)-Cr_(2)O_(3)-Ta_(2)O_(5)体系中引入Gd,制备了兼具高非线性系数和低泄漏电流的SnO_(2)压敏陶瓷材料。结果表明:Gd的掺杂能够促进晶粒生长,降低样品气孔率,并在掺杂量为0.25%(如无特殊说明均为摩尔分数)时获得了最佳的电气性能,非线性系数达到55,泄漏电流低至7.74 mA/cm^(2),同时电压梯度高达568 V/mm,在50 Hz频率下介电常数高达213,显示出其潜在的应用前景。但过饱和的掺杂会恶化压敏陶瓷的电气性能。本工作将非线性系数的变化归因于晶界势垒的提升,认为泄漏电流减小是晶界电阻升高,电子迁移率下降导致的,并从点缺陷的角度分析了晶界势垒升高的原因,系统地阐述了Gd的掺杂对SnO_(2)压敏电阻陶瓷电气性能和微观结构的影响机理。By introducing Gd into the SnO_(2)-Co_(3)O_(4)-Cr_(2)O_(3)-Ta_(2)O_(5)system,this work prepared a SnO_(2)varistor ceramic material with a high nonlinear coefficient and low leakage current.The results show that the doping of Gd can promote grain growth,reduce the porosity of the sample,and obtain the best electrical performance when the doping amount is 0.25mol%,with a nonlinear coefficient reaching 55 and a leakage current as low as 7.74 mA/cm^(2).At the same time,the voltage gradient is also as high as 568 V/mm,and the dielectric constant is as high as 213 at a frequency of 50 Hz,showing its potential application prospects.However,oversaturated doping will deteriorate the electrical properties of varistor ceramics.We attribute the change in the nonlinear coefficient to the improvement of the grain boundary barrier.The decrease in leakage current is caused by the increase in grain boundary resistance and the decrease in electron mobility.The reason for the increase in grain boundary barrier was analyzed from the perspective of point defects,and the influence mechanism of Gd doping on the electrical properties and microstructure of SnO_(2)varistor ceramics was systematically explained.

关 键 词：SnO_(2)压敏电阻 非线性 泄漏电流 晶界电阻 势垒 点缺陷 

分 类 号：TM283[一般工业技术—材料科学与工程]