适用于STT-MRAM的写电压产生电路设计  

Write Voltage Generation Circuit Design for STT-MRAM

作　　者：莫愁 王艳芳 李嘉威 陆楠楠 MO Chou;WANG Yanfang;LI Jiawei;LU Nannan(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子与封装》2025年第1期29-34,共6页Electronics & Packaging

摘　　要：自旋转移力矩随机磁存储器(STT-MRAM)是一种新型的非易失性存储器,在各行各业均具有广泛的应用前景。STT-MRAM使用磁隧道结(MTJ)器件来存储信息,写电压通常是零温度系数的,但MTJ的临界翻转电压具有负温度特性,高温时写电压与临界翻转电压相差较大,影响器件寿命,低温时写电压与临界翻转电压接近,甚至可能低于临界翻转电压,导致写入困难。针对MTJ的临界翻转电压的负温度特性,设计了一款宽温区温度自适应的写电压产生电路,在-40~125℃下为MTJ提供稳定的写电压,实现宽温度范围尤其是低温下数据的正常写入,并提高了高温下器件的寿命。经过后仿真验证,该电路在-40~125℃温度范围内均能实现MTJ成功写入,且写入电压与临界翻转电压的差值在100 mV左右。Spin transfer torque magnetic random access memory(STT-MRAM)is a new type of non-volatile memory with a wide range of applications in various industries.STT-MRAM uses magnetic tunnel junction(MTJ)devices to store information.The write voltage usually has zero temperature coefficient,but the critical flip-flop voltage of MTJ has a negative temperature characteristic,so the difference between the write voltage and the critical flip-flop voltage is large at high temperature,which affects the lifetime of the device,and at low temperature,the write voltage is close to,or may even be lower than the critical flip-flop voltage,which makes it difficult to write.Aiming at the negative temperature characteristic of the critical flip-flop voltage of MTJ,a wide temperature adaptive write voltage generator circuit is designed to provide stable write voltage for MTJ at-40-125℃,to realize the normal writing of data in wide temperature range,especially at low temperature,and to improve the lifetime of the device at high temperature.After post-simulation verification,the MTJ can be successfully written in the temperature range of-40-125℃,and the difference between the write voltage and the critical flip-flop voltage is about 100 mV.

关 键 词：自旋转移力矩随机磁存储器 磁隧道结 宽温区 温度自适应 写电压产生电路 

分 类 号：TN492[电子电信—微电子学与固体电子学]