SiC及其复合材料的发展与应用  

Development and Applications of SiC and Its Composite Materials

作　　者：刘瑞兆 关康 Liu Ruizhao;Guan Kang(School of Materials Science and Engineering,South China University of Technology,Guangdong,510640)

机构地区：[1]华南理工大学材料科学与工程学院,广东510640

出　　处：《当代化工研究》2025年第1期139-142,共4页Modern Chemical Research

摘　　要：碳化硅(Silicon Carbide,SiC)作为第三代半导体材料,因其出色的物理和化学性质在众多领域展现出巨大应用潜力。从结构(Structure)、性质(Properties)、应用(Applications)3个方面介绍了SiC材料,对SiC材料在半导体行业中的应用现状和发展前景进行了简要综述,为SiC材料的研究提供了新视角。Silicon carbide(SiC)as a third-generation semiconductor material,exhibits tremendous potential for many applications.SiC was introduced from three aspects:Structure,properties,and applications.It provides a concise overview of the current state and future prospects of SiC materials in the semiconductor industry,offering a new perspective for the research on SiC materials.

关 键 词：SIC 第三代半导体 新能源汽车 光伏 航空航天 

分 类 号：TN305.8[电子电信—物理电子学]