AlN as interlayer for effective thermal dissipation from gallium nitride to CVD diamond using nanocrystalline diamond seeding  

作　　者：Liwen Sang Meiyong Liao Bo Shen 

机构地区：[1]Institute of Optoelectronics,Fudan University,Shanghai,China [2]Research Center for Functional Materials,National Institute for Materials Science,Tsukuba,Ibaraki,Japan [3]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing,China

出　　处：《Information & Functional Materials》2024年第3期331-337,共7页信息与功能材料(英文)

基　　金：Ministry of Education,Culture,Sports,Science and Technology;Japan Science and Technology Agency;National Key Research and Development Program of China,Grant/Award Number:2018YFE0125700。

摘　　要：With the increasing power density achieved in gallium nitride(GaN)electronic devices,the thermal dissipation becomes a key issue that restricts their ultimate performances.However,the effective thermal boundary resistance(TBReff)between GaN and their heat spreader usually dominates the heat concentration.Here we introduce a super‐thin AlN interlayer with nanocrystalline diamond(NCD)seeding as the nucleation for the polycrystalline diamond(PCD)film growth on the GaN films.A thermal conductivity approaching 250 W/mK for the 1.2μm‐thick PCD film is obtained.The TBReff between GaN and PCD films is estimated to be 5 m2K/GW,which is much smaller than that of the typical SiNx interlayer.Since AlN can be deposited simultaneously with the device structure,this work is promising to achieve the full potential of using diamond as the heat spreader for GaN‐based transistors.

关 键 词：ALN DIAMOND GAN thermal dissipation 

分 类 号：TN3[电子电信—物理电子学]