偏压对AEG辅助离子渗氮+HiPIMS沉积TiAlSiN涂层组织和力学性能的影响  

Effect of bias voltage on microstructure and mechanical properties of TiAlSiN layer prepared by AEG-assisted ion nitriding pluse HiPIMS deposition

作　　者：曾琨 成永健 李志荣 胡树兵[2] 罗志明 刘纪元 ZENG Kun;CHENG Yong-jian;LI Zhi-rong;HU Shu-bing;LUO Zhi-ming;LIU Ji-yuan(Guangdong Huicheng Vacuum Technology Co Ltd,Dongguan 523838,China;School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China)

机构地区：[1]广东汇成真空科技股份有限公司,广东东莞523838 [2]华中科技大学材料科学与工程学院,湖北武汉430074

出　　处：《材料热处理学报》2025年第1期154-163,共10页Transactions of Materials and Heat Treatment

基　　金：国家科技重大专项(2024ZD14047-05);国家重点研发计划(2020YFB2010304)。

摘　　要：采用AEG(Arc electronic generator)弧光电子发生器辅助渗氮技术在H13(4Cr5MoSiV1)钢表面进行真空离子渗氮,通过X射线衍射仪、扫描电镜和维氏硬度计分析了偏压对渗氮层的微观组织和性能的影响。结果表明:渗氮层的物相主要为含氮马氏体α-Fe(N),随着偏压的增加,α-Fe(N)相向ε-Fe_(3)N相与γ′-Fe_(4)N相转变,渗氮层的厚度也随之增加,直到偏压增加到-600 V时渗氮层被刻蚀下来。在-400 V时,渗氮层的厚度最厚,为90μm,硬度最高约为1300 HV0.1。在-400 V偏压渗氮层的基础上,利用高功率脉冲磁控溅射(HiPIMS)技术沉积TiAlSiN涂层,采用X射线衍射仪、扫描电镜、划痕仪和纳米硬度计等分析了不同偏压下涂层的组织和性能。结果表明:TiAlSiN涂层基本以TiALN(200)相形式存在,随着偏压的增加,Ti元素的比例会增加;涂层的结合力随着偏压的增加而先增加后下降,在-120 V时,临界载荷LN,C2最高为85 N;TiAlSiN涂层的力学性能(H_(IT)/E_(IT)、H_(IT)^(3)/E_(IT)^(2))随着偏压的增加而先增加后下降,在-90 V时H_(IT)/E_(IT)最高约为0.093,H_(IT)^(3)/E_(IT)^(2)最高约为0.275。AEG(Arc electronic generator)arc electron source assisted nitriding technology was used to perform vacuum ion nitriding on the surface of H13(4Cr5MoSiV1)steel.The influence of bias voltage on microstructure and properties of the nitriding layer was analyzed by X-ray diffractometer,scanning electron microscopy and Vickers hardness tester.The results show that the main phase of the nitriding layer is nitrogen-containing martensiteα-Fe(N).With the increase of bias voltage,theα-Fe(N)phase transforms intoε-Fe_(3)N phase andγ′-Fe_(4)N phase,and the thickness of the nitriding layer also increases until the bias voltage increases to-600 V,at which point the nitriding layer is etched away.At-400 V,the thickness of the nitriding layer is the thickest,at 90μm,and the highest hardness is about 1300 HV0.1.On the basis of-400 V bias nitriding layer,TiAlSiN layer was deposited using high power impulse magnetron sputtering(HiPIMS)technology.The microstructure and properties of the TiAlSiN layer at different bias voltages were analyzed using X-ray diffractometer,scanning electron microscopy,scratch meter and nanohardness tester.The results show that the TiAlSiN layer mainly exists in the TiALN(200)phase form,and the proportion of Ti element increases with the increase of bias voltage.The bonding force of the layer increases first and then decreases with the increase of bias voltage.At-120 V,the critical load LN,C2 reaches a maximum of 85 N.The mechanical properties of the TiAlSiN layer(H_(IT)/E_(IT),H_(IT)^(3)/E_(IT)^(2))first increase and then decrease with the increase of bias voltage.At-90 V,the highest H_(IT)/E_(IT)is about 0.093,and the highest H_(IT)^(3)/E_(IT)^(2)is about 0.275.

关 键 词：离子渗氮 AEG 偏压 HIPIMS TiAlSiN 力学性能 

分 类 号：TG174.44[金属学及工艺—金属表面处理]