浅谈三代半导体材料的应用现状及前景展望  

Introduction to the current status of the application of three generations of semiconductor materials and prospects for the future

作　　者：廖师师 谢邱虹 蒋琦 LIAO Shi-shi;XIE Qiu-hong;JIANG Qi(Sichuan University Jinjiang College,School of Electrical and Electronic Information Engineering;Sichuan University Jinjiang College,School of Computer Science)

机构地区：[1]四川大学锦江学院电气与电子信息工程学院 [2]四川大学锦江学院计算机学院

出　　处：《中国集成电路》2025年第1期34-39,共6页China lntegrated Circuit

基　　金：四川大学锦江学院青年教师科研基金项目(QNJJ-2024-B02)。

摘　　要：硅(Si)、砷化镓(GaAs)、氮化镓(GaN)分别作为第一代、第二代、第三代半导体典型材料之一,在各自的应用领域都发挥着重要作用,成为现代科技支柱的一部分。本文分别从材料物理特性、器件结构及工艺制造、未来挑战三个方面对Si、GaAs、GaN三种半导体材料进行了对比分析,说明了三种半导体材料在各自的应用领域都有着重要的应用前景,但同时也面临新的挑战。Silicon Si,gallium arsenide GaAs,gallium nitride GaN,respectively,as one of the typical materials of the first generation,the second generation,the third generation of semiconductors,in their respective fields of application are playing an important role,become part of the pillars of modern science and technology.In this paper,respectively,from the physical properties of the material,device structure and process manufacturing,the future challenges of the three aspects of Si,GaAs,GaN for the comparative analysis,explains the three semiconductor materials in their respective fields of application have an important application prospects,but at the same time also faced with new challenges.

关 键 词：SI GAAS GAN 半导体 器件结构 工艺制造 

分 类 号：TN304[电子电信—物理电子学]