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作 者:刘士琳 王凯 雷程[1] 余建刚 王涛龙 路晶 李博[1] 郭晋竹 梁庭[1] Liu Shiin;Wang Kai;Lei Cheng;Yu Jiangang;Wang Taoong;Lu Jing;Li Bo;Guo Jinzhu;Liang Ting(State Key Laboratory of Dynamic Measurement Technology,North University of China,Taiyuan 030051,China;Tianjin Weijia Environmental Technology Co.,Ltd.,Tianjin 300450,China;CETC Fenghua Information-Equipment Co.,Ltd.,Taiyuan 030062,China)
机构地区:[1]中北大学省部共建动态测试技术国家重点实验室,山西太原030051 [2]天津伟加环境科技有限公司,天津300450 [3]中电科风华信息装备股份有限公司,山西太原030062
出 处:《电镀与精饰》2025年第2期9-16,共8页Plating & Finishing
基 金:国家重点研发计划资助项目(2023YFB3208500);山西省科技重大专项计划“揭榜挂帅”资助项目(202201030201010);山西省重点研发计划资助项目(2023020302010);山西省基础研究计划资助项目(202103021223185&202203021222079)。
摘 要:镍是最常用的SiC干法刻蚀掩膜,其质量会直接影响刻蚀效果。为了探索不同厚度种子层对碳化硅表面电镀厚镍掩膜的影响,基于电镀原理,采用磁控溅射沉积金属金作为电镀镍种子层,并采用直流电流分别在其表面电镀制备镍膜,使用台阶仪、原子力显微镜、扫描电子显微镜分别对电镀速率、粗糙度以及镀层侧壁形貌进行表征。结果表明:种子层厚度100~400 nm范围内,随着种子层厚度的增加,镀层表面粗糙度先增大再减小,镀层表面颗粒团聚尺寸逐渐增大,镀层电镀速率逐渐增大,边缘速率增大趋势更加显著,镀层侧壁倾角逐渐减小,镀层横向生长逐渐增加。其中100 nm种子层表面镀层厚度>20μm,粗糙度33.852 nm,侧壁倾角72.1°,结构裸露比92.5%,作为SiC刻蚀掩膜更优,为电镀制备厚镍掩膜工艺研究提供了方向。Nickel is the most commonly used SiC dry etching mask,and its quality will directly affect the etching effect.In order to explore the effect of different thicknesses of seed layers on the electroplated thick nickel mask on the surface of silicon carbide,based on the principle of electroplating,magnetron sputtering was used to deposit metallic gold as the electroplated nickel seed layer,and a nickel film was prepared by electroplating on the surface with a direct current.And the electroplating rate,surface morphology,roughness,and the morphology of plated sidewalls were characterized using the bench-top meter,atomic force microscope,and scanning electron microscope,respectively.The results show that:within the range of 100-400 nm seed layer thickness,with the increase of the seed layer thickness,the surface roughness of the plating layer increases and then decreases,the size of the particle agglomeration on the surface of the plating layer gradually increases,the plating rate of the plating layer gradually increases,the trend of the edge rate increase is more significant,the inclination angle of the plating layer sidewalls decreases,and the transverse growth of the plating layer gradually increases.The surface coating thickness of 100 nm seed layer is>20μm,roughness is 33.852 nm,sidewall inclination is 72.1°,and structural exposure ratio is 92.5%,which is better as a SiC etching mask,providing a direction for the preparation of thick nickel mask by electroplating.
分 类 号:TQ153.2[化学工程—电化学工业]
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