6-inch AlN epitaxial films with low dislocation densities via MOCVD  

作　　者：Shunpeng Lu Jianwei Ben Ke Jiang Shanli Zhang Ruojia Zhang Jialong Hao Zhongxu Liu Wenchao Sun Zikai Nie Xiaojuan Sun Dabing Li 

机构地区：[1]State Key Laboratory of Luminescence Science and Technology,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2025年第2期151-157,共7页半导体学报(英文版)

基　　金：supported by National Key R&D Program of China(2022YFB3605100);the National Science Fund for Distinguished Young Scholars of China(62425408);the National Natural Science Foundation of China(62204241,U22A2084,and 62121005);Key Research and Development Projects of Jilin Provincial Science and Technology Development Plan(20240302027GX);the Natural Science Foundation of Jilin Province(20230101345JC,20230101360JC,20230101107JC);the Youth Innovation Promotion Association of CAS(2023223);the Young Elite Scientist Sponsorship Program By CAST(YESS20200182);the CAS Talents Program.

摘　　要：High-quality AlN epitaxial layers with low dislocation densities and uniform crystal quality are essential for next-gener-ation optoelectronic and power devices.This study reports the epitaxial growth of 6-inch AlN films on 17 nm AlN/sapphire tem-plates using metal-organic chemical vapor deposition(MOCVD).Comprehensive characterization reveals significant advance-ments in crystal quality and uniformity.Atomic force microscopy(AFM)shows progressive surface roughness reduction during early growth stages,achieving stabilization at a root mean square(RMS)roughness of 0.216 nm within 3 min,confirming suc-cessful 2D growth mode.X-ray rocking curve(XRC)analysis indicates a marked reduction in the(0002)reflection full width at half maximum(FWHM),from 445 to 96 arcsec,evidencing effective dislocation annihilation.Transmission electron microscopy(TEM)demonstrates the elimination of edge dislocations near the AlN template interface.Stress analysis highlights the role of a highly compressive 17 nm AlN template(5.11 GPa)in facilitating threading dislocation bending and annihilation,yielding a final dislocation density of~1.5×10^(7) cm^(-2).Raman spectroscopy and XRC mapping confirm excellent uniformity of stress and crystal quality across the wafer.These findings demonstrate the feasibility of this method for producing high-quality,large-area,atomically flat AlN films,advancing applications in optoelectronics and power electronics.

关 键 词：ALN 6-inch MOCVD threading dislocation density OPTOELECTRONIC power electronics 

分 类 号：TN304.055[电子电信—物理电子学]