外延生长具有厚度可调导电属性的非层状二维碲化锰纳米片用于p-型场效应晶体管和优异的接触电极  

Epitaxial Growth of Nonlayered 2D MnTe Nanosheets with Thickness-Tunable Conduction for p-Type Field Effect Transistor and Superior Contact Electrode

作　　者：贺梦菲 陈超 唐月 孟思 王遵法 王立煜 行家宝 张欣宇 黄佳慧 卢江波 井红梅 刘翔宇[2] 徐华 Mengfei He;Chao Chen;Yue Tang;Si Meng;Zunfa Wang;Liyu Wang;Jiabao Xing;Xinyu Zhang;Jiahui Huang;Jiangbo Lu;Hongmei Jing;Xiangyu Liu;Hua Xu(Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education,Shaanxi Key Laboratory for Advanced Energy Devices,School of Materials Science and Engineering,Shaanxi Normal University,Xi’an 710119,China;School of Chemistry and Chemical Engineering,Ningxia University,Yinchuan 750021,China;School of Physics and Information Technology,Shaanxi Normal University,Xi’an 710119,China)

机构地区：[1]陕西师范大学材料科学与工程学院,应用表面与胶体化学教育部重点实验室,陕西省先进能源器件重点实验室,西安710119 [2]宁夏大学化学化工学院,银川750021 [3]陕西师范大学物理与信息技术学院,西安710119

出　　处：《物理化学学报》2025年第2期107-115,共9页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金(22222505,51972204,22375121);中央高校基本科研业务费专项(GK202308002);陕西省自然科学基础研究计划项目(2021JM-203);陕西省大学生创新创业训练计划项目(S202310718158);陕西省三秦学者创新团队项目;陕西师范大学材料科学与工程学院创新团队项目资助。

摘　　要：碲化锰(manganese telluride,MnTe)作为一种新兴的非层状二维材料,因其优异的性质以及在下一代电子和光电子器件中的巨大潜力,而受到研究学者们的广泛关注。然而,目前超薄二维MnTe的可控合成仍然是一个巨大的挑战,这限制了对其基础性质的研究和应用的深入探索。本文采用化学气相沉积方法成功合成了大面积的MnTe纳米片,并探究了其厚度对电学性质和器件应用的影响。通过提高MnTe纳米片的生长温度,样品厚度逐渐增加,晶畴尺寸从10μm增至125μm,形貌从三角形逐渐过度到六边形,最终生长成高度对称的圆形。结构表征和二次谐波测试表明,所制备的MnTe纳米片具有高度的结晶质量和优异的二阶非线性光学性质。此外,通过对不同厚度MnTe纳米片的电学输运测试,发现随着厚度从薄到厚,其导电特性从p型半导体逐渐转变为半金属。因此,利用半导体特性的薄层MnTe纳米片构建的光电探测器展现出出色的光响应性能。而将金属特性的厚层MnTe作为MoS2场效应晶体管的接触电极,显著提高了器件性能,如载流子迁移率可从12.76 cm^(2)·V^(-1)·s^(-1)(Au接触)提升到47.34 cm^(2)·V^(-1)·s^(-1)(MnTe接触)。Two-dimensional(2D)transition-metal dichalcogenides(TMDs)exhibit diverse structures,encompassing a broad spectrum of electronic types ranging from metal,semiconductor,to insulator and topological insulator.They hold immense potential for both Moore and more-than-Moore device applications.Among them,manganese telluride(MnTe),an emerging nonlayered 2D material,has garnered considerable attention due to its exceptional properties and significant application potential in next-generation electronic and optoelectronic devices.However,the controllable synthesis of ultra-thin 2D MnTe remains a great challenge,which hindering the comprehensive exploration of its fundamental properties and potential applications.In this study,we present the synthesis of large-area MnTe nanosheets through chemical vapor deposition growth,showcasing its thickness-dependent properties and device applications.By increasing the growth temperature from 500 to 750℃,the MnTe nanosheets’thickness transitions from thin-layer to a thick flake,the domain size increases from 10 to 125μm,the morphology changes from triangle to hexagon,culminating in a highly symmetrical round shape.Structural characterization and second harmonic generation measurements reveal that the obtained MnTe nanosheets exhibit high crystallization quality and superior second-order optical nonlinearity.The field effect transistor(FET)constructed with thin-layer MnTe demonstrates a p-type semiconductor characteristic,transitioning to a semimetal feature as the thickness increases to a thick flake.Leveraging these thickness-dependent electrical conduction transition features,we explore diverse applications of MnTe with varying thicknesses.The semiconductive thin-layer MnTe,serving as the photosensitive channel in a device,achieves superior photoresponse,showcasing considerable potential for photodetection appliations.The semimetallic thick-layer MnTe,acting as the contact electrode in a MoS2 FET,significantly enhances device performance,with carrier mobility increasing from 12.

关 键 词：二维材料 碲化锰 化学气相沉积 场效应晶体管 光电探测器 接触电极 

分 类 号：O649[理学—物理化学]