VIISta HCS离子注入机在离子束优化与检测期间的金属污染探究及改善  

Exploration and Improvement of Metal Contamination During Ion Beam Optimization and Detection Using VIISta HCS Ion Implantation Machine

作　　者：李天清 LI Tianqing(No.20 Xinhu Road,Xinwu District,Wuxi 214000,China)

机构地区：[1]新吴区信湖路20号,江苏无锡214000

出　　处：《电子与封装》2025年第2期74-78,共5页Electronics & Packaging

摘　　要：针对半导体行业所面临的金属污染问题,VIISta HCS离子注入机虽已具备若干成熟的改进措施,然而在先进制程对离子注入工艺金属纯净度要求日益严格的当下,迫切需要明确该机型金属污染的其他潜在原因。该机型在进行离子束优化与检测的过程中,设备会进行气流、电压、电流以及其他硬件参数的调整。这些调整可能对机台的金属析出产生影响,从而导致污染。经验证,设备在对离子束参数进行检查后,注入的硅片中金属铝的含量有所上升。针对铝含量增加的问题进行了理论分析和实验验证。结果表明,通过多次手动移动图形法拉第杯,可以有效促进铝元素的提前析出。通过使用特定程序的挡片来执行离子束通道清洁作业,成功实现了铝洁净度34%的提升,显著缓解了在离子束参数检查过程中铝含量变差的问题,提高了工艺稳定性。In response to the metal contamination problem faced by the semiconductor industry,the VIISta HCS ion implantation machine has several mature improvement measures.However,with the increasingly stringent metal purity requirements of the ion implantation process in advanced processes,it is urgent to identify other potential causes of metal contamination in this model.During the process of ion beam optimization and detection of this model,the equipment makes adjustments to airflow,voltage,current,and other hardware parameters.These adjustments may have an impact on the metal precipitation of the machine,leading to contamination.After verification,it is found that there is an increase in the metal aluminum content in the injected silicon wafer after checking the ion beam parameters.Theoretical analysis and experimental verification are conducted to address the issue of increased aluminum content.The results indicate that by manually moving the graphical Faraday cup multiple times,the early precipitation of aluminum element can be effectively promoted.By using specific program shields to perform ion beam channel cleaning operations,a 34%improvement in aluminum cleanliness is successfully achieved.This improvement significantly alleviates the problem of aluminum content deterioration during ion beam parameter inspection and improves process stability.

关 键 词：离子注入 离子束 金属污染 法拉第杯 

分 类 号：TN409[电子电信—微电子学与固体电子学] TG174.4[金属学及工艺—金属表面处理]