基于栅极和漏极电压检测的SiC MOSFET短路保护电路研究  

Research on SiC MOSFET Short-Circuit Protection Based on Gate and Drain Voltage Detection

作　　者：宛新春 陈其工[1,2] 杨锦涛 武逸飞 Wan Xinchun;Chen Qigong;Yang Jintao;Wu Yifei(Key Laboratory of Advanced Perception and Intelligent Control of High-End Equipment Ministry of Education Anhui Polytechnic University,Wuhu 241000 China;School of Electrical Engineering Anhui Polytechnic University,Wuhu 241000 China)

机构地区：[1]安徽工程大学高端装备先进感知与智能控制教育部重点实验室,芜湖241000 [2]安徽工程大学电气工程学院,芜湖241000

出　　处：《电工技术学报》2025年第4期1145-1155,1168,共12页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金区域创新发展联合基金资助项目(U21A20146)。

摘　　要：SiC MOSFET广泛应用于电力电子变换设备中,快速、准确且可靠的短路保护电路已成为推广其应用的关键技术之一。该文对SiCMOSFET的各类短路过程进行分析,利用器件短路时漏源极电压迅速增加的特点,设计短路保护电路的拓扑结构和功能,检测SiCMOSFET栅极和漏极电压,并将该信号进行分析、锁存、隔离、滤波处理,若器件发生短路,则输出短路信号给栅极驱动芯片。在此基础上,采用基本逻辑器件和高速器件设计保护电路,理论上分析计算该电路在不同短路类型下的响应时间。计入所有影响保护速度的因素,该电路能在600 ns内实现SiC MOSFET短路保护,尤其是在发生负载短路故障时能将短路保护时间缩短至200 ns以内,其响应速度受不同母线电压影响较小。搭建实验平台,测试了该电路在不同母线电压、短路类型、驱动能力等情况下的短路保护性能,实验结果与理论分析和设计要求相符合。SiC MOSFETs are extensively used in various power electronic conversion equipment.A fast,accurate,and reliable short-circuit protection circuit has become one of the key technologies for its popularization and application.When a short circuit occurs in the SiC MOSFET,the short-circuit protection circuit must achieve rapid detection and judgment,filter out interference signals,and drive the SiC MOSFET to turn off reliably.Additionally,this circuit should possess characteristics such as low loss and minimal impact on the main circuit.In this paper,diverse short-circuit processes of SiC MOSFETs are analyzed.Considering the rapid increase advantage in drain-source voltage during device short-circuiting,the short-circuit protection circuit’s topology and functionality are designed with gate and drain voltage detection of the SiC MOSFET for decision-making.Subsequently,the signal is analyzed,latched,isolated,and filtered.If a device experiences a short circuit fault,the corresponding signal triggers output to activate gate driver chips for effective device protection.The short-circuit protection circuit possesses sufficient speed,accuracy,and reliability.Accordingly,a short-circuit protection circuit for SiC MOSFETs is designed using logic and high-speed components.The response time of the circuit under different short circuits is calculated,including detection delay,filtering delay,processing time,and propagation delay.The proposed short-circuit protection circuit allows for appropriate adjustment of filtering time to different operating conditions,which has good anti-interference performance.The double-pulse test platform for SiC MOSFET is constructed to evaluate the short-circuit protection performance under different bus voltages,short-circuit types,driving capacities,and gate driver conditions.The experimental results agree with theoretical analysis and design requirements,confirming that the proposed circuit is superior to the classic desaturation fault protection(DESAT)circuit.Theoretical analysis and experime

关 键 词：SIC MOSFET 短路保护 栅极电压检测 漏极电压检测 

分 类 号：TM46[电气工程—电器]