Ar离子注入蓝宝石衬底诱导成核的高质量GaN外延  

High Quality GaN Epitaxy Induced Nucleation by Ar Ion Implantation into Sapphire Substrate

作　　者：安瑕 许晟瑞 陶鸿昌 苏华科 杨赫 许钪 谢磊 贾敬宇 张进成[1] 郝跃[1] AN Xia;XU Shengrui;TAO Hongchang;SU Huake;YANG He;XU Kang;XIE Lei;JIA Jingyu;ZHANG Jincheng;HAO Yue(School of Microelectronics,Xidian University,Xi’an 710071,China)

机构地区：[1]西安电子科技大学微电子学院,西安710071

出　　处：《无机材料学报》2025年第1期91-96,共6页Journal of Inorganic Materials

基　　金：国家自然科学基金(62074120,62134006);国家重点研发计划(2022YFB3604400)。

摘　　要：氮化镓(Ga N)薄膜通常是在异质衬底上获得的,然而异质外延引入的高密度位错限制了其在高性能电子器件和光电器件中的发展。本研究采用Ar离子预处理蓝宝石衬底来实现诱导成核,显著降低了Ga N外延层中的位错密度。优化Ar离子的注入剂量发现,当剂量为1×10^(11)cm^(-2)时,螺位错密度为5.26×10^(7)cm^(-2),刃位错密度为1.95×10^(8)cm^(-2),总位错密度比传统蓝宝石衬底上生长的Ga N降低了65%。光致发光(Photoluminescence,PL)测试结果表明,经过诱导成核的Ga N外延层的光学性能有所提高,与未注入的样品相比,PL强度最高提升了152%。本研究提出的Ar离子诱导成核技术是一种工艺简单、效果显著的方法,可以提高异质外延GaN层晶体质量,对实现高效率GaN基发光二极管(Light Emitting Diode,LED)和高性能电子器件具有重要意义。Gallium nitride(GaN)thin films are typically obtained on foreign substrates.Hetero-epitaxial growth of GaN leads to high density of threading dislocations,which poses a significant challenge to promote high-performance electronic device and photoelectric device based on these films.This research used Ar-ion implantation pretreatment on sapphire substrates to induce high-quality nucleation,reducing the dislocation density in GaN epitaxial layers.By optimizing the dosage of Ar ions,it was found that when the Ar ion dosage was 1×10^(11)cm^(–2),the screw dislocation density was 5.26×10^(7) cm^(–2),and the edge dislocation density was 1.95×10^(8) cm^(–2),the total dislocation density decreased by 65%compared to GaN grown on traditional sapphire substrate.Photoluminescence spectra realized that the optical performance of the GaN epitaxial layer with induced nucleation was also improved.In contrast to the untreated sample,the photoluminescence strength increased by 152%.Therefore,all above results indicate that the Ar ion induced nucleation technique proposed in this study is a simple and effective method that can be used to improve the crystal quality of GaN layers.This is of great significance for achieving high-efficiency GaN-based LEDs and high-performance electronic devices.

关 键 词：GAN 离子注入 诱导成核 外延 

分 类 号：TM23[一般工业技术—材料科学与工程]