背栅效应下氮化镓功率器件中的载流子缺陷能级与结构研究  

Research on Energy Levels and Structures of Carrier Defects in GaN Power Devices under Back-Gating Effects

作　　者：张梦蝶 季雯 曹茹月 姜俊松 尹玉莲 谭琨 赵长辉 张召富 郭宇铮 唐曦 ZHANG Mengdie;JI Wen;CAO Ruyue;JIANG Junsong;YIN Yulian;TAN Kun;ZHAO Changhui;ZHANG Zhaofu;GUO Yuzheng;TANG Xi(Institute of Physical Science and Information Technology,Anhui University,Hefei 230601,Anhui,China;The Institute of Technological Sciences,Wuhan University,Wuhan 430072,Hubei,China;Department of Engineering,University of Cambridge,Cambridge CB21PZ,United Kingdom)

机构地区：[1]安徽大学物质科学与信息技术研究院,安徽合肥230601 [2]武汉大学工业科学研究院,湖北武汉430072 [3]剑桥大学工程系,英国剑桥CB21PZ

出　　处：《武汉大学学报(理学版)》2024年第6期763-768,共6页Journal of Wuhan University:Natural Science Edition

基　　金：安徽省高校协同创新项目(GXXT-2023-001);安徽省自然科学基金(2308085QF212);武汉大学电子制造与封装集成湖北省重点实验室开放基金(EMPI2023008)。

摘　　要：通过实验表征和理论计算为氮化镓功率器件中的材料缺陷和背栅效应之间提供了物理联系。首先制备了硅基氮化镓高电子迁移率晶体管;然后采用电流瞬态方法研究了器件中背栅效应下的缺陷能级,基于时间常数谱和阿伦尼乌斯定律分析,确定了三种主要的电子缺陷能级,分别为0.169、0.240和0.405 eV;最后,利用第一性原理计算研究了缺陷的可能结构。This study establishes a physical link between material defects and back-gating effects in GaN power devices through experimental characterization and theoretical calculations.GaN high electron-mobility transistors were first fabricated on the GaN-on-Si platform.Then,the defect level under back-gating effects was investigated using the current transient method.Three major electron defects were identified based on the time-constant spectra and Arrhenius law with energy levels of 0.169,0.240,and 0.405 eV,re⁃spectively.Finally,first-principles calculations were conducted to explore the potential structures of these defects.

关 键 词：背栅效应 电流瞬态方法 缺陷能级 第一性原理计算 

分 类 号：O474[理学—半导体物理]