基于MOCVD的β-Ga_(2)O_(3)同质外延与Al掺异质结外延生长研究进展  

Research Progress on β-Ga_(2)O_(3) Homoepitaxial and Al Doped Heterojunction Epitaxial Growth by MOCVD

作　　者：刘洋[1] 何云龙[1] 陈谷然[2] 陆小力[1] 郑雪峰[1] 马晓华[1] 郝跃[1] LIU Yang;HE Yunlong;CHEN Guran;LU Xiaoli;ZHENG Xuefeng;MA Xiaohua;HAO Yue(State Key Laboratory of Wide-bandgap Semiconductor Devices and Integrated Technology,National Engineering Research Center of Wide Band-gap Semiconductor,Faculty of Integrated Circuit,Xidian University,Xi'an,710071,CHN;State Key Laboratory of Wide-bandgap Semiconductor Devices and Integrated Technology,Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]西安电子科技大学集成电路学部宽禁带半导体器件与集成技术全国重点实验室宽禁带半导体国家工程研究中心,西安710071 [2]南京电子器件研究所宽禁带半导体器件与集成技术全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2025年第1期1-15,共15页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(62474133,U2241220);实验室开放基金项目(2413S111);中央高校基本业务费资助项目(QTZX23019,ZDRC2002)。

摘　　要：β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。β-Ga_(2)O_(3) is a highly promising semiconductor material due to its ultra-wide bandgap,high critical breakdown field,and excellent Baliga's figure of merit.In recent years,it has demonstrated significant application potential in fields such as power electronics and deep ultraviolet photodetection.Metal-organic chemical vapor deposition (MOCVD) technology is an advantageous method for the industrialization of β-Ga_(2)O_(3),offering benefits such as high growth rates,precise control over film thickness,excellent film quality,and large-scale growth capabilities.Consequently,it has been widely utilized in the epitaxial growth of β-Ga_(2)O_(3).This article reviews the research on MOCVD homoepitaxial growth of β-Ga_(2)O_(3) along various common crystal orientations and presents the current status of MOCVD epitaxial growth of the promising β-(Al_(x)Ga_(1-x))_(2)O_(3).Finally,it concludes with main challenges in MOCVD-based growth of these two materials and offers an outlook for future developments.

关 键 词：β-Ga_(2)O_(3) 金属有机化学气相沉积 同质外延 β-(Al_(x)Ga_(1-x))_(2)O_(3) 

分 类 号：TN304.2[电子电信—物理电子学]