增强型Si基GaN HEMT的p-GaN栅特性改善研究  

Investigation on the Enhancement of p-GaN Gate Characteristics of Enhanced Si-based GaN HEMT

作　　者：鲍诚 王登贵 任春江[1] 周建军[1] 倪志远 章军云[1] BAO Cheng;WANG Denggui;REN Chunjiang;ZHOU Jianjun;NI Zhiyuan;ZHANG Junyun(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2025年第1期16-21,共6页Research & Progress of SSE

基　　金：五十五所稳定支持资助项目(2310N061);国家自然科学基金资助项目(62104218)。

摘　　要：阈值电压和栅极漏电是评价增强型Si基p-GaN栅结构GaN HEMT器件性能的重要参数。热应力和电应力变化会加剧器件栅极附近的电子隧穿效应,促使热电子与器件缺陷相互作用形成界面态,进而导致栅极漏电增大和阈值电压漂移,长时间工作会引起栅极特性退化,阻碍了GaN电力电子器件的大规模工程化应用。本文基于101.6 mm(4英寸)GaN器件工艺平台研制了一款增强型Si基p-GaN栅结构GaN HEMT器件,引入了双层源场板和源接地孔结构设计,并研究了该结构对器件栅极漏电与阈值电压的影响。引入上述结构的器件低温(-50℃)下阈值电压相比高温(155℃)时变化了0.4 V,200 V漏极电应力测试后器件阈值电压相比测试前变化了0.24 V,漏极电压变化时阈值电压变化量为0.2 V,变化量均低于未引入该结构的器件。此外,栅极电压为5 V时,研制的400μm器件栅极漏电为1.4μA,在热应力与电应力测试后的变化量约0.1μA。测试结果表明研制的增强型p-GaN栅结构GaN HEMT能够在复杂环境下安全工作。Threshold voltage and gate leakage are crucial parameters for assessing the performance of GaN HEMT devices with an enhanced Si-based p-GaN gate structure. The variation of thermal stress and electrical stress will facilitate the electron tunneling effect near the gate of the device, and facilitate the interaction between hot electrons and device defects to form an interface state, thereby resulting in the increase of gate leakage and threshold voltage drift. The long-term operation will cause the deterioration of gate characteristics and impede the large-scale engineering application of GaN power electronic devices. In this paper, an enhanced p-GaN GaN HEMT device was fabricated based on the 101.6 mm(4 inch) GaN device technology platform. The two-layer source field plate and source grounding hole structure were investigated, and the influence of this structure on the gate leakage and threshold voltage of the device was explored. The threshold voltage of the device at low temperature(-50℃) varies by 0.4 V compared with that at high temperature(155℃). After a 200 V drain stress test, the threshold voltage of the device varies by 0.24 V, the threshold voltage shifts by 0.2 V when the drain voltage varies, and the variation is lower than that of device without this structure. Furthermore, when the gate voltage attains a value of 5 V, the gate leakage current of the fabricated 400 μm device amounts to 1.4 μA, and undergoes a variation of approximately 0.1 μA subsequent to the thermal stress and electrical stress tests. The test outcomes manifest that the developed enhanced p-GaN grid structure GaN HEMT is competent to operate securely in intricate environments.

关 键 词：GaN HEMT P-GAN 阈值电压 栅极漏电 热应力 电应力 

分 类 号：TN386[电子电信—物理电子学]