基于谐波调谐的C波段高效率GaN HEMT功率放大器  

A C-Band High Efficiency GaN HEMT Power Amplifier Based on Harmonic Tuning

作　　者：李俊敏[1,2] 刘英坤 李通[1,2] 蔡道民 Li Jummin;Liu Yingkun;Li Tong;Cai Daomin(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;Beijing CLP Navigation Co.,Ltd.,Beijing 100000,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]北京中电科卫星导航系统有限公司,北京100000

出　　处：《半导体技术》2025年第3期289-295,共7页Semiconductor Technology

摘　　要：为解决传统功率放大器在管壳外部进行谐波匹配,导致谐波短路传输相位不一致和谐波、基波匹配电路互相影响的问题,基于0.25μm GaN HEMT工艺,对C波段高效率预匹配功率放大器进行研究。功率放大器管壳内部HEMT输入端采用键合线和瓷片电容形成T型匹配网络来提升输入阻抗,以HEMT输出端键合线和瓷片电容分别作为电感和电容进行串联,使HEMT输出端对二次谐波短路,控制器件的电压和电流波形,提高放大器的漏极效率。管壳外部利用微带线进行阻抗变换,将输入输出阻抗匹配到50Ω。经测试,GaN HEMT功率放大器在5.8 GHz下饱和输出功率、漏极效率和功率增益分别为48.7 dBm、72%和11.3 dB。To solve the problem of inconsistent transmission phase of harmonic short-circuit and mu-tual influence between harmonic and fundamental wave matching circuits caused by traditional harmonic matching outside the power amplifier package,a C-band high efficiency pre-matching power transistor was developed based on 0.25μm GaN HEMT process.A T-type matching network was formed by bonding wires and ceramic capacitors at the input end of the HEMT inside the package to enhance the input impedance.The bonding wires and ceramic capacitors were connected in series as inductors and capacitors at the output end of the HEMT respectively,so as to cause the HEMT output end to short the second harmonic,controlling the voltage and current waveforms of the device and improving the drain efficiency of the amplifier.The microstrip line impedance transformation was used outside the package to match input and output impedances of the amplifier to 50 Q2.The output power,drain efficiency and power gain of the GaN HEMT power amplifier designed and implemented with this method are 48.7 dBm,72%and 11.3 dB at 5.8 GHz,respectively.

关 键 词：谐波阻抗匹配 漏极效率 GAN HEMT 功率放大器 

分 类 号：TN722.75[电子电信—电路与系统] TN454