动态随机存储器IC芯片制造技术的进展与展望  

Advance and future prospect for fabricating technology of DRAM IC chips

作　　者：孙以材[1] 王静[1] 赵彦晓[1] 田立强[1] 刘江[1] 

机构地区：[1]河北工业大学,天津300130

出　　处：《半导体技术》2002年第12期10-13,共4页Semiconductor Technology

摘　　要：介绍了DRAM 0.1mm特征尺寸理论极限的突破及相关技术进展,以及各种非易失性随机存储器(NVRAM)如FeRAM,相变RAM,MRAM。现今PC中的RAM很快将被NVRAM所取代,从而可缩短PC的启动时间。This article introduces the theoretical limit 0.1mm of the critical dimension of DRAM andits breaking through,the related technologies, and the development of the varies NVRAM, such asFeRAM, phase transformation RAM and MRAM. RAM in present PC will be immediately substi-tuted by NVRAM to minimize the starting time for PC.

关 键 词：动态随机存储器 IC芯片 展望 集成电路 非易失性随机存储器 

分 类 号：TP333.8[自动化与计算机技术—计算机系统结构]