电磁脉冲对半导体器件影响机制研究概述  

An Overview of the Influence Mechanism of Electromagnetic Pulse on Semiconductor Devices

作　　者：段鑫沛 朱云娇 殷亚楠 周昕杰[1,2] DUAN Xin-pei;ZHU Yun-jiao;YIN Ya-nan;ZHOU Xin-jie(China Electronics Technology Group Corporation No.58 Research Institute;Key Laboratory of Aerospace Integrated Circuits and Microsystem,Ministry of Industry and Information Technology)

机构地区：[1]中国电子科技集团公司第五十八研究所 [2]空天集成电路与微系统工业和信息化部重点实验室

出　　处：《中国集成电路》2025年第3期43-49,共7页China lntegrated Circuit

基　　金：空天集成电路与微系统工业和信息化部重点实验室2024年开放课题(W2431)。

摘　　要：电磁脉冲环境是复杂电磁兼容环境的重要组成部分,不论是战略军事领域还是重要基础设施建设,所包含的大量电子系统和集成电路设备均受到电磁脉冲的威胁。因此,开展电磁脉冲对半导体器件的影响机理及加固技术研究具有十分重要的战略意义。本文重点介绍电磁脉冲技术的发展以及对半导体器件的作用机理,分析电磁脉冲效应的研究方法与研究现状,为进一步开展基于半导体器件的电磁脉冲加固技术研究提供重要的参考依据。Electromagnetic pulse environment is an important part of the complex electromagnetic compatibility environment.A large number of electronic systems and integrated circuit equipment are threatened by electromagnetic pulses,no matter in the strategic military field or important infrastructure construction.Therefore,it is of great strategic significance to study the influence mechanism and reinforcement technology of electromagnetic pulse on semiconductor devices.This paper mainly introduces the development of electromagnetic pulse technology and its mechanism of action on semiconductor devices,analyzes the research methods and current research status of the electromagnetic pulse effect,and provides an important reference for further research on electromagnetic pulse hardening technology based on semiconductor devices.

关 键 词：电磁脉冲 半导体器件 高功率微波 电磁兼容 

分 类 号：TN03[电子电信—物理电子学] TN303