氧化钨忆阻器的制备及其神经突触特性  

Preparation of Tungsten Oxide Based Memristors and Their Neural Synaptic Properties

作　　者：邱志程 李阳 QIU Zhicheng;LI Yang(School of Information Science and Engineering,University of Jinan,Jinan 250022,Shandong,China;School of Integrated Circuits,Shandong University,Jinan 250101,Shandong,China;Shandong Yunhai Guochuang Cloud Computing Equipment Industry Innovation Co.,Ltd.,Jinan 250101,Shandong,China)

机构地区：[1]济南大学信息科学与工程学院,山东济南250022 [2]山东大学集成电路学院,山东济南250101 [3]山东云海国创云计算装备产业创新中心有限公司,山东济南250101

出　　处：《济南大学学报(自然科学版)》2025年第2期278-285,共8页Journal of University of Jinan(Science and Technology)

基　　金：国家自然科学基金项目(62005095)。

摘　　要：为了实现忆阻器在神经网络中的应用,采用磁控溅射技术制备模拟型氧化钨忆阻器;在氧化铟锡导电玻璃衬底上依次生长氧化钨薄膜和银薄膜,将氧化钨作为阻变层,氧化铟锡作为底电极,银作为顶电极;采用扫描电子显微镜和系统数字源表表征制备的氧化钨忆阻器的结构、电学性能和导通机制。结果表明:制备的氧化钨忆阻器具有优异的突触性能,阻变机制由银导电细丝为主导;将制备的忆阻器用于神经网络仿真,准确率达到99.11%,与中央处理器的准确率99.31%相近,能够应用于神经形态的计算。To realize the application of the memristor in neural networks,analogue tungsten oxide memristors were prepared by the magnetron sputtering technique.Tungsten oxide and silver films were sequentially deposited on an indium tin oxide conducting glass substrate.Tungsten oxide served as the resistive layer,while indium tin oxide functioned as the bottom electrode,and silver acted as the top electrode.The structure,electrical properties,and conduction mechanism of the prepared tungsten oxide memristors were characterized by using scanning electron microscopy and system digital sourcemeter.The results show that the prepared tungsten oxide memristors have excellent synaptic properties,and the resistive mechanism is dominated by silver conductive filaments.The prepared memristors are used for neural network simulation,and the accuracy reaches 99.11%,which is similar to that of the central processor at 99.31%,indicating that they can be applied to neuromorphic computation.

关 键 词：忆阻器 人工突触 磁控溅射 神经网络 神经形态计算 

分 类 号：TN303[电子电信—物理电子学]