2英寸Fe掺杂高阻β相氧化镓单晶生长及(010)衬底性质研究  

Growth of 2-Inch Fe-Doped β-Ga_(2)O_(3)Single Crystal with High Resistance and Properties of(010)Substrates

作　　者：严宇超 王琤 陆昌程 刘莹莹 夏宁 金竹 张辉[1,2] 杨德仁 YAN Yuchao;WANG Cheng;LU Changcheng;LIU Yingying;XIA Ning;JIN Zhu;ZHANG Hui;YANG Deren(State Key Laboratory of Silicon and Advanced Semiconductor Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China;Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,ZJU-Hangzhou Global Scientific and Technological Innovation Center,Hangzhou 311200,China;Hangzhou Garen Semiconductor Company Limited,Hangzhou 311200,China)

机构地区：[1]浙江大学材料科学与工程学院,硅及先进半导体全国重点实验室,杭州310027 [2]浙江大学杭州国际科创中心先进半导体研究院和浙江省宽禁带功率半导体材料与器件重点实验室,杭州311200 [3]杭州镓仁半导体有限公司,杭州311200

出　　处：《人工晶体学报》2025年第2期197-201,共5页Journal of Synthetic Crystals

基　　金：浙江省“尖兵”“领雁”研发攻关计划(2023C01193);中央高校基本科研业务费(226-2022-00200,226-2022-00250);博士后创新人才支持计划(BX20220264);国家青年拔尖人才支持计划;杭州市领军型创新创业团队引进培育计划(TD2022012)。

摘　　要：本文使用直拉法制备了Fe掺杂的大尺寸β相氧化镓(β-Ga_(2)O_(3))单晶,加工制备了高质量的2英寸(1英寸=2.54 cm)(010)衬底,并对衬底的结晶质量、加工质量与电学性质进行了研究。偏光应力仪下的均匀图像表明该衬底无孪晶、裂纹等宏观缺陷,宏观结晶质量良好。该衬底的(020)面X射线摇摆曲线半峰全宽(FWHM)的最大值为29.7″,表明具有良好的微观结晶质量。该衬底的表面平均粗糙度(Ra)的最大值为0.240 nm,局部厚度偏差(LTV)低于1.769μm,总厚度偏差(TTV)为5.092μm,翘曲度(Warp)为3.132μm,表明具有良好的衬底加工质量。此外,该衬底约7×10^(11)Ω·cm的高电阻率为微波射频器件的开发提供了基础支撑。In this work,large-size Fe-doped β-Ga_(2)O_(3)single crystals were grown by Czochralski method.High quality 2 inch(1 inch=2.54 cm)(010)substrates were fabricated,and the crystal quality,processing quality and electrical properties of these substrates were studied.The uniform appearance of the substrates under the polarizing strain gauge indicates the absence of twinning,cracks and other macrocopic defects,confirming their good macrocrystalline quality.The full width at half maximum(FWHM)of the X-ray rocking curve of(020)plane for these substrates is less than 29.7″,reflecting good microcrystalline quality.The surface average roughness(Ra)of the substrates is less than 0.240 nm,with a local thickness variation(LTV)less than 1.769μm,a total thickness variation(TTV)of 5.092μm,and a warp of 3.132μm,suggesting superior substrate processing quality.Furthermore,the electrical resistivity of the substrate is~7×10^(11)Ω·cm,facilitating the development of the microwave and radio frequency devices.

关 键 词：氧化镓 宽禁带半导体 晶体生长 直拉法 单晶衬底 掺杂 

分 类 号：O782.5[理学—晶体学] TQ133.51[化学工程—无机化工] TN304.21[电子电信—物理电子学]